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  • 1
    Electronic Resource
    Electronic Resource
    Excimer laser induced diffusion in magnetic semiconductor quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1373-1379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of pulsed laser annealing (PLA) of CdTe/CdMnTe quantum well structures are made in order to examine depth dependent effects in laser irradiated semiconductors. Since diffusion coefficients are strongly dependent on the temperature, depth resolution is achieved because the diffusion of Mn from the barriers into the quantum wells is depth dependent. Multiple quantum well (MQW) structures of CdTe/CdMnTe were annealed with single pulses from an XeCl laser at 308 nm. At a threshold of 90 mJ cm−2 two new emission bands are observed that are attributed to the diffusion of Mn from barrier layers to QWs. The diffusion associated with these bands, measured as the integrated product of the diffusion constant and time, is found to be 300 and 30 Å2. Calculations of the temperature, reached within the surface following PLA, using an analytical solution of the heat diffusion equation coupled with known high temperature diffusion coefficients predict the diffusion to decrease by one order of magnitude within one period at the top of the MQW stack. It is suggested that at the threshold surface melting occurs and that these emission bands arise from the QWs immediately beneath the melt front. The diffusion of Mn ions into the QWs is confirmed by magneto-optical data. A further emission band occurs at this same threshold with a Mn concentration above that of the concentration in the barrier layers of the MQW stack. This emission is attributed tentatively to the segregation of the Mn ion within the molten region following recrystallization. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373826
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  • 2
    Electronic Resource
    Electronic Resource
    Evidence for a thermal mechanism in excimer laser ablation of thin film ZnS on Si (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3855-3859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of thermal conduction into the substrate during excimer laser ablation of thin film ZnS on silicon has been investigated. An analytical solution of the heat diffusion equation for a two-layer system has been used to calculate temperature profiles within the film and substrate arising from laser irradiation. The experimentally observed ablation rates are found to correlate with calculated surface temperatures, thereby demonstrating that thermal conduction into the substrate influences the ablation characteristics. Thus we are able to provide a simple predictive model for the ablation rate at any fluence incident on any thin film thickness. We find that for very thin films, optical interference effects reduce the energy coupled into the films and it is necessary to consider these within the model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369756
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  • 3
    Electronic Resource
    Electronic Resource
    The Structure of β-Rhombohedral Boron1 (1963)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 85 (1963), S. 361-362 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00886a036
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  • 4
    Electronic Resource
    Electronic Resource
    The Structure of Tetragonal Boron1 (1958)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 80 (1958), S. 4507-4515 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01550a019
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  • 5
    Electronic Resource
    Electronic Resource
    Evidence for bias dependent barrier heights in gold-epitaxial CdTe Schottky diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3295-3299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The forward bias and reverse bias current-voltage characteristics of some gold-epitaxial CdTe-on-InSb Schottky diodes have been measured at room temperature. Series resistance is evident in undoped material (base electron concentration ∼1014 cm−3) which has been measured and corrected for and identified as arising from the reverse biased CdTe-InSb junction. Two straight lines of differing slopes are present in the semilog plots for all the diodes, which we interpret as a bias-dependent barrier height. The two barrier heights, 0.91±0.04 eV and 0.74±0.02 eV, are well known in the Au-CdTe system, from which we conclude that two discrete states are present at the CdTe-Au interface. The occupancy of the states is determined by the applied bias, and hence the barrier height changes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358614
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence and p-type conductivity in CdTe:N grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An rf nitrogen (N) plasma source has been used to achieve p-type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p-type conductivity has been obtained using capacitance-voltage and current-voltage techniques. Net hole concentrations as high as 2×1017 cm−3 have so far been achieved, which contrasts with the normally n-type nature of our undoped CdTe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357197
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characteristics of Al/ZnS/p-p+ Si diodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 195-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of Al/ZnS/p-Si diodes have been investigated. The behavior is shown to be very similar to that of the tin oxide /ZnS/p-n+ diodes used previously for electroluminescent diodes indicating that current through the ZnS is limited by the rate of generation of minority carriers in the p-Si. The fact that the current is limited is the surest indication that no breakdown is occurring either in the ZnS or the silicon. These results are discussed, both in the context of device manufacture and in the context of a recent theory of breakdown in electroluminescent diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98920
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1623-1625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analysis of normal incidence spectral reflectivity of excimer laser annealed α-Si:H shows that the annealed material can be modeled as a stratified system comprising a large-grained polycrystalline layer, a fine grained polycrystalline layer, and residual amorphous silicon in agreement with transmission electron microscopy. Optically, the large-grained poly-Si behaves as single-crystal silicon and the fine-grained material is modeled, using effective medium theory, as a mixture of single-crystal silicon and amorphous silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117051
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  • 9
    Electronic Resource
    Electronic Resource
    Changes in Frequency of Plants Resistant to Barley Leaf Rust Caused by Puccinia hordei Otth. in a Barley Composite Cross Population (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 110 (1993), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The response of barley Composite Cross XLI to selection for resistance to leaf rust was evaluated. Representative samples from eight cycles of recurrent selection were inoculated with an isolate of Puccinia bordei Otth. in both the seedling and adult plant stage. Disease symptoms were evaluated 14 days after inoculation. The resistance in CC XLI increased with selection in the seedling stage from 15.1 to 20.5 %, and in the adult plant stage from 20.5 to 37.5 %, respectively. The largest gains in resistance were observed in the earlier cycles of recurrent selection. Significant fluctuations in percent resistant plants occurred between the years.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.1993.tb00566.x
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  • 10
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    Gifts and Commodities (Book Review) (1984)
    London : Periodicals Archive Online (PAO)
    Journal of contemporary Asia. 14:1 (1984) 118 
    Details
    ISSN: 0047-2336
    Topics: History , Political Science , Sociology , Economics
    Notes: Reviews
    URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pao:&rft_dat=xri:pao:article:f626-1984-014-01-000009
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