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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5663-5667 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current discharge plasma produced by the Ta-LaB6 cathode was used for ion plating of TiN films. The dependence of the deposition rate of TiN on the substrate dc bias potential was measured using the Rutherford backscattering spectrometry (RBS) method. The results indicate that the particles impinging on the substrate, i.e., vaporized particles (Ti) and reactive gases (N2), could be ionized at high efficiency of 70%. Epitaxial TiN films were grown at temperatures between 400 and 700 °C on cleaved MgO(100) substrate supplied with negative dc anf rf potential. Structures of the epitaxial film were investigated by RBS and ion channeling, and scanning tunneling microscope (STM). The minimum channeling yields for (100) and (110) axes obtained at a substrate temperature of 550 °C with the growth rate of 40 A(ring)/s were found to be 1.4% and 2.0%, respectively, which were almost the same as that of the MgO substrate. Atomically resolved tunneling images of (100) surface of the epitaxial TiN film were observed by STM.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7018-7021 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline β-SiC samples were implanted with 50 keV 15N ions with fluences ranging from 3×1017 to 1.5×1018 ions/cm2 at elevated temperature up to 1100 °C. Nitrogen depth profiles were measured as a function of implantation temperature and annealing temperature using nuclear reaction analysis, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. It was found that the maximum concentration and the width of nitrogen depth profiles implanted at 1100 °C were reduced distinctly in comparison with the profiles implanted below 930 °C or annealed at 1100 °C. The redistribution of nitrogen implanted in SiC at 1100 °C was ascribed to the formation of β-Si3N4 crystallites in SiC, which was confirmed by x-ray diffraction at glancing incidence. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 282-287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers etched at an angle were fabricated on a 6H-SiC substrate by varying etching time in diluted hydrofluoric acid, and 6H-SiC metal–oxide–semiconductor structures with various oxide thicknesses were formed. High-frequency capacitance–voltage measurements were carried out for determining the change in gate voltages corresponding to the midgap condition as a function of the thickness of the oxide layer, and the depth profile of trapped charge density in the oxide was estimated from the result. It is found that negative charges build up near the 6H-SiC/SiO2 interface, and that positive charges accumulate in the region at 40 nm from the interface. No significant difference is observed in the depth profiles of the trapped charge density between the oxide layers on the carbon and silicon faces. The origin of these trapped charges is discussed in conjunction with the carbon-related compounds in the oxide layers. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1500-1503 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study effects of ion implantation with the energy scanning mode on the surface structure and the depth profile, Zr samples were implanted with 15N2 ions, where ion energy was scanned in the range of 70–100 and 70–130 keV using a computer-controlled power supply at an interval of 2 keV while monitoring the ion current of the sample. After the implantation of a total fluence of 3.5×1017 ions/cm2, the depth profiles of 15N2 ions in Zr were measured by nuclear reaction analysis of 15N(p,αγ)12C at 429 keV and the surface was observed by scanning electron microscopy. It was found that the implanted surface structure strongly depended on the implantation mode, and blistering induced by high fluence implantation of nitrogen could be completely avoided with the implantation mode of increasing energy gradually. The depth profiles were satisfactorily in agreement with the prediction by Monte Carlo simulation. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4224-4226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed hydrogenated microcrystalline silicon germanium, which exhibits a red-shifted absorption spectrum relative to hydrogenated microcrystalline silicon, as a candidate material for the bottom cell of amorphous silicon-based tandem solar cells. Optical absorption, x-ray diffraction, and Raman scattering spectra are presented in addition to optoelectronic properties and light-induced changes. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3403-3405 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) formation using hydrogen plasma treatments, in particular examining the possibility of subsurface reaction due to permeating hydrogen atoms, which leads to the crystallization of hydrogenated amorphous silicon (a-Si:H). It is demonstrated that the hydrogen plasma treatment of a-Si:H film on the anode using a cathode covered by a-Si:H film, which is inevitably coated during the deposition period, gives rise to the deposition of μc-Si:H over the a-Si:H layer, i.e., chemical transport takes place. It is also found that the pure hydrogen plasma treatment using a clean cathode induces only etching of the a-Si:H layer. These results imply that the present hydrogen plasma condition does not cause crystallization of a-Si:H but only etching, and that careful experimentation is required to determine the real subsurface reaction due to atomic hydrogen. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1464-1466 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the memory effect of an AlGaAs/GaAs heterojunction field-effect transistor that contains InAs nanodots in the barrier layer. The device experiences a shift of threshold gate voltage, as a function of the amount of the electrons trapped in the nanodots. These trapped electrons can be injected by applying a positive gate voltage and be erased by a visible light illumination at negative gate bias. Although the shift of the threshold gate voltage volatilizes with the time after the memory programing operation, a considerable part of the shift is retained even after 100 h at room temperature. © 2000 American Institute of Physics.
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  • 8
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. Germination modes of lower seeds of cocklebur (Xanthium pennsylvanicum Wallr.) under different water stresses, prepared with mannitol solution, were examined in relation to gaseous factors. As the concentration of mannitol increased, germination was increasingly inhibited at a mode which was drawn by two straight lines having different slopes and meeting at an angle. One is a sharp line occurring at the lower concentrations of mannitol; the other is a gentle line occurring at higher concentrations of mannitol. The former reflected the growth response of axial tissues to mild water stress, whereas the latter reflected the growth response of cotyledonary tissues to severe water stress. The germination potential of cocklebur seeds increased with increasing temperature. Thus, the seeds were more resistant to water stress at higher than al lower temperatures. This increased germination potential under water stress resulted from the greater growth potential of axial tissues, but not cotyledonary tissues, at higher temperature. Increased O2 levels improved both the reduced axial and cotyledonary growth under water stress. Carbon dioxide predominantly enhanced axial growth under water stress, whereas C2H4 exclusively enhanced cotyledonary growth. Thus, these gases were effective in potentiating germination under water stress. When combined with each other, these gases caused more pronounced growth of the axial and cotyledonary tissues, leading to germination under more severe water stresses. Maximal axial and cotyledonary growth under water stress occurred in the simultaneous presence of CO2, C2H4 and O2, which allowed the germination at higher mannitol concentrations above 0.6 kmol m−3 From these results, it was suggested that cocklebur seeds would override water stress by depending upon both the Corresponding axial growth and the C2H4-responding cotyledonary growth.
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  • 9
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillan Magazines Ltd.
    Nature 396 (1998), S. 55-57 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The atomic structure of quasicrystals — solids with long-range order, but non-periodic atomic lattice structure — is often described as the three-dimensional generalization of the planar two-tile Penrose pattern. Recently, an alternative model has been proposed that describes such ...
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