ISSN:
1432-0630
Keywords:
PACS: 73.20.-r; 73.20.At; 73.40.Ns
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
2 /p-Si MOS structures were prepared in 0.1 M K2SO4 electrolyte with a pH of 7 (the 0.1 M KOH solution was buffered with H2SO4) at current densities of 3, 5, and 7 mA/cm2 and with four different pH values of the electrolyte at 3 mA/cm2. It is found that thermal annealing at a relatively low temperature can be used to improve the anodic MOS characteristics. Moreover, of the pH and current density it followed that the pH has a dominant role in the interface electrical properties. The lowest interface state densities at the maximum and the midgap positions are 7.1×1011 and 2.7×1010 eV-1cm-2 for a sample made with pH=7, J=3 mA/cm2. The characteristics of this sample seem satisfactory for device applications of anodized p-Si.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050537
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