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  • 1
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    The ferrichrome receptor A as a new target for Pseudomonas aeruginosa virulence attenuation (2016)
    Oxford University Press
    Details
    Publication Date: 2016-05-12
    Description: Pseudomonas aeruginosa is an opportunistic pathogen, known to develop robust biofilms. Its biofilm development increases when antibiotics are presented at subminimal inhibitory concentrations (MICs) for reasons that remain unclear. In order to identify genes that affect biofilm development under such a sublethal antibiotic stress condition, we screened a transposon (Tn) mutant library of PAO1, a prototype P. aeruginosa strain. Among ~5000 mutants, a fiuA gene mutant was verified to form very defective biofilms in the presence of sub-MIC carbenicillin. The fiuA gene encodes ferrichrome receptor A, involved in the iron acquisition process. Of note, biofilm formation was not decreased in the pchpvd mutant defective in the production of pyochelin and pyoverdine, two well-characterized P. aeruginosa siderophore molecules. Moreover, fiuA , a non-polar fiuA deletion mutant, produced a significantly decreased level of elastase, a major virulence determinant. Mouse airway infection experiments revealed that the mutant expressed significantly less pathogenicity. Our results suggest that the fiuA gene has pleiotropic functions that affect P. aeruginosa biofilm development and virulence. The targeting of FiuA could enable the attenuation of P. aeruginosa virulence and may be suitable for the development of a drug that specifically controls the virulence of this important pathogen.
    Keywords: Pathogens & Pathogenicity
    Print ISSN: 0378-1097
    Electronic ISSN: 1574-6968
    Topics: Biology
    Published by Oxford University Press
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties of ion-beam sputter-deposited Fe-Ni-B-Si films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4315-4317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced Fex-Ni80−x -B15-Si5 (x=20, 40, and 75) and permalloy thin films on a silicon substrate using ion-beam sputtering technique. Four-point probe measurement indicated that quarternary films had 3–4 times higher resistivity than permalloy films, and this ratio was not changed after thermal annealing. The values of saturation magnetization were determined to be 5–13 kG depending on Fe concentration. The anisotropy fields of these films were in the ranges of 2–15 Oe after deposition, however, these values were reduced by more than 50% after annealing with field. The lowest value of the anisotropy field was 1.3 Oe for the permalloy film after thermal annealing without field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340213
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2011-2016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy has been used to characterize as-grown and ion-implanted 3C-SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion-implanted Lely-grown SiC were also observed in the as-grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as-grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely-grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted-ion species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337997
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of boron implantation in films of iron-nickel (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4312-4314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have implanted boron ions into films of Fe-Ni alloy composition. A homogeneous distribution of boron was determined from the sputter Auger analysis with a concentration of 18% and 34% for low- and high-dose implantation, respectively. The resistivity of film was increased by a factor of 2 and 4 as a result of low- and high-dose implantation, respectively. The magnetic properties of these films are studied as a function of annealing temperature by using FMR measurements. Both the uniaxial anisotropy field and FMR linewidth are dramatically decreased as a result of annealing at elevated temperatures. The changes of effective magnetization of these films are strongly dependent on implanted boron concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340212
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  • 5
    Electronic Resource
    Electronic Resource
    Microwave-detected optical response of YBa2Cu3O7−x thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4212-4216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave-detected optical response (MDOR) of YBa2Cu3O7−x and other oxide superconductor thin films is shown to yield information complementary to that provided by trasnport photoconductivity measurements. The MDOR technique yields a superposition of response from all illuminated portions of a sample, irrespective of the existence of a resistive macroscopic percolative current path. The response is found to be bolometric at temperatures for which resistance appears in transport measurements. At low temperatures MDOR results imply a nonbolometric response which in some respects is consistent with nonequilibrium quasiparticle concentration due to radiative pair breaking.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344958
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  • 6
    Electronic Resource
    Electronic Resource
    Spin-wave resonance in FeNiBSi films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3805-3807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnetic resonance (FMR) measurements have been performed on thin films of Fe80−xNixB15 Si5 alloys (x=5, 40, and 60). The effective magnetization (4πMeff ), magnetic anisotropy field (HA), and g factor were measured. The values of g for all the films ranged between 1.90〈g〈2.11. Spin-wave resonance (SWR) excitations were observed for H, the magnetic field, applied perpendicular to the film plane. SWR fields were found to obey the n2 law and yielded exchange constants in the range of A=0.2–1.9×10−6 ergs/cm. The nearest-neighbor exchange parameter J was deduced from A and implies that J varies within a factor of 2 as the value of x changes. In one of the nickel-rich samples, the SWR fields appear to be linear with n implying nonuniform distribution of magnetization in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340620
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  • 7
    Electronic Resource
    Electronic Resource
    Significant reduction of the microwave surface resistance of MgB2 films by surface ion milling (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3299-3301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microwave surface resistance RS of MgB2 films with the zero-resistance temperature of ∼39 K was measured at 8.0–8.5 GHz. The MgB2 films were prepared by deposition of boron films on c-cut sapphire, followed by annealing in a magnesium vapor environment. The RS appeared significantly reduced by ion milling of the as-grown MgB2 film surface, with the observed RS of ∼0.8 mΩ at 24 K for an ion-milled MgB2 film as small as 1/15 of the value for the corresponding as-grown MgB2 film. The reduced RS of the ion-milled MgB2 films is attributed to the effects of the Mg-rich metallic layer existing at the surfaces of the as-grown MgB2 films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418026
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of exposure to electromagnetic field on the cardiovascular system (2005)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 25 (2005), S. 0 
    Details
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 We examined whether extremely low frequency electromagnetic fields (ELF-EMF) affect the basal level of cardiovascular parameters and influence of drugs acting on the sympathetic nervous system. 2 Male rats were exposed to sham control and EMF (60 Hz, 20 G) for 1 (MF-1) or 5 days (MF-5). We evaluated the alterations of blood pressure (BP), pulse pressure (PP), heart rate (HR), and the PR interval, QRS interval and QT interval on the electrocardiogram and dysrhythmic ratio in basal level and dysrhythmia induced by β-adrenoceptor agonists. 3 In terms of the basal levels, there were no statistically significant differences among control, MF-1 and MF-5 in PR interval, QRS interval, mean BP, HR and PP. However, the QT interval, representing ventricular repolarization, was significantly reduced by MF-1 (P 〈 0.05). 4 (−)-Dobutamine (β1-adrenoceptor-selective agonist)-induced tachycardia was significantly suppressed by ELF-EMF exposure in MF-1 for the increase in HR (ΔHR), the decrease in QRS interval (ΔQRS) and the decrease in QT (ΔQT) interval. Adrenaline (nonselective β-receptor agonist)-induced dysrhythmia was also significantly suppressed by ELF-EMF in MF-1 for the number of missing beats, the dysrhythmic ratio, and the increase in BP and PP. 5 These results indicated that 1-day exposure to ELF-EMF (60 Hz, 20 G) could suppress the increase in HR by affecting ventricular repolarization and may have a down-regulatory effect on responses of the cardiovascular system induced by sympathetic agonists.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1474-8673.2004.00328.x
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  • 9
    Electronic Resource
    Electronic Resource
    Electrode reduction kinetics of carbon dioxide in aqueous solution (1972)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 76 (1972), S. 3278-3286 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100666a029
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  • 10
    Electronic Resource
    Electronic Resource
    Chromosome analysis by fluorescence in situ hybridization of callus-derived regenerants in Allium cyaneum R. (1998)
    Springer
    Plant cell reports 18 (1998), S. 209-213 
    Details
    ISSN: 1432-203X
    Keywords: Key words Somaclonal variation ; Allium cyaneum ; Fluorescence in situ hybridization ; Autotetraploid regenerants
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Investigations were performed to confirm the optimal in vitro culture condition for callus induction and plant regeneration, to observe if somoclonal variation occurs among regenerated plants at the ploidy level and to analyse the chromosomal location of 5S and 18S-26S rRNA gene families using fluorescence in situ hybridization in callus-derived plants of Allium cyaneum. High-est callus initiation was achieved with bulb explants cultured on MS medium supplemented with 2,4-D and BAP at 1 mg l–1 each. A total of 195 plants was obtained when using MS medium supplemented with 1 mg l–1 NAA and 5 mg l–1 BAP; about 92% were diploid having 2n=16; 8% showed a variation in ploidy level. Using digoxigenin-labelled 5S rRNA and biotin-labelled 18S-26S rRNA gene probes, we compared the fluorescence in situ hybridization patterns of autotetraploid plants with the A. cyaneum wild type. The 5S rRNA gene sites were detected on the interstitial region in the short arm of chromosome 4 and on the interstitial region in both arms of chromosome 7. The 18S-26S rRNA gene sites were detected on the terminal region of the short arm, including the satellite of chromosome 5, as well as on a part of chromosome B. The chromosomal location of both rRNA genes in regenerated autotetraploid plants corresponded to those of the wild species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002990050558
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