Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 108-110
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial layers of Pb1−xEuxTe with x〈0.06 have been grown for the first time using liquid phase epitaxy. The epitaxy was done from Te-rich solutions since the commonly used Pb solutions, which exothermally form Pb-Eu intermetallics, cannot be used to grow this compound. The basic growth parameters and conditions were investigated. The results show that the incorporation of Eu into PbTe lattice is an endothermal process, with an activation energy of 1.0 eV. The reported technique yields device quality layers showing flat surfaces and sharp interfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99065
Permalink
|
Location |
Call Number |
Expected |
Availability |