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  • 1
    Electronic Resource
    Electronic Resource
    Copper silicide precipitation influenced by the strain of a Ge0.02Si0.98 heteroepitaxial layer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4994-5000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper silicide precipitates in silicon by forming elliptical colonies in {110} planes. In strained Ge0.02Si0.98 heteroepitaxial layers on (001) silicon substrates the colonies prefer {110} planes intersecting the surface under an angle of 45° with zero strain and avoid {110} planes perpendicular to the surface with maximum compressive strain. For the first time copper silicide precipitate colonies lying in (001) surrounded by Lomer dislocations have been observed and studied in detail. They are due to the maximum tensile strain in the [001] direction. The ordering of colonies increases as long as no relaxation via misfit dislocations occurs. The depth of the defect zone containing copper silicide precipitate colonies in the substrate wafer increases with the thickness of a thermal oxide layer on its surface. After annealing in nitrogen the copper silicide precipitate zone remains constant. The morphology of the copper precipitate colonies is first of all determined by the stress of the studied layer system and only to a less extent by the available silicon self-interstitials. Copper silicide precipitate colonies grow below a relaxing heteroepitaxial layer in a patterned arrangement that corresponds to the arrangement of the misfit dislocations. The elastic strain of the heteroepitaxial layer strongly influences the accumulation of copper impurities in the silicon substrate. The smaller the distance between the misfit dislocations becomes, the smaller is the depth of the defect zone containing copper silicide precipitate colonies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355791
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  • 2
    Electronic Resource
    Electronic Resource
    Model calculations of the angular dependence of the switching field of imperfect ferromagnetic particles with special reference to barium ferrite (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3597-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on a one-dimensional model of an infinite material with a slab in which the magnetocrystalline anisotropy is zero [A. Aharoni, Phys. Rev. 119, 127 (1960)], the angular dependence of the switching field is calculated. The results are compared with experimental data of barium ferrite. It is found that for small defect regions the predictions agree well with experimental data, but for bigger ones considerable differences occur. The shape anisotropy effect as well as the effects of inhomogeneous reversals in ideal specimens are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342638
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  • 3
    Electronic Resource
    Electronic Resource
    Slip-free processing of 300 mm silicon batch wafers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1543-1549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under gravitational and thermal constraints of integrated-circuit (IC) process technology, 300-mm-diam silicon wafers can deform via slip dislocation generation and propagation, degrading the electrical characteristics of the leading edge device. We present a force balance model to describe the strain relaxation in large wafer diameter, which includes heat transfer effects and the upper yield point of the silicon material. The material attributes, such as oxygen content and the state of oxygen aggregation, are taken into account. The theoretical approach allows the calculation of wafer mechanics and ramp rate profiles for an arbitrary high-temperature process. Plastic deformation of silicon wafers caused by thermal stresses at high temperatures can be controlled by process design. Deformation due to gravitational forces can be prevented through appropriate equipment design. The quantitative theory proposed here provides guidance for computer simulation to configure stable slip-free wafer process flow under mechanical and thermal loads. Applications include high speed simulation of "what if?" experiments, and initial simulations of large scale experimental sequences. The simulator developed can also be used by IC manufacturers to determine optimum wafer throughput and cycle times in front-end device processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372047
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  • 4
    Electronic Resource
    Electronic Resource
    Comment on "An alternating-gradient magnetometer'' [J. Appl. Phys. 63, 3940 (1988)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1358-1358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a recent article, an alternating field-gradient magnetometer was described [P. J. Flanders, J. Appl. Phys. 63, 3940 (1988)]. For calibration of the system, a calculation was carried out. Here, the treatment of the extension rod of that system and the considerations concerning the piezoceramic are criticized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343033
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  • 5
    Electronic Resource
    Electronic Resource
    Laser-induced chemical reactions at the Al/III-V compound semiconductor interface (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1994-2002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used pulsed laser annealing to promote and characterize highly localized chemical reactions at Al interfaces with III-V compound semiconductors. At successive stages of these laser-induced reactions, we have monitored atomic movement and chemical structure on a microscopic scale using soft x-ray photoemission spectroscopy and Auger electron spectroscopy. For Al on each of the six III-V compound semiconductors investigated, we have found a finite range of energy density above a characteristic threshold energy density such that a chemical reaction is produced without disrupting the surface morphology. The systematic change of threshold with different semiconductors indicates a thermally activated reaction occurring in the molten phase of the Al overlayer and a thin substrate layer. Heat flow calculations, which model the temperature profiles during and after the laser pulse, confirm this model and also account for the highly abrupt interface between the reacted ternary overlayer and the binary substrate. The excellent agreement between experiment and theory demonstrates that thermal properties of the semiconductor have a dominant influence on the interfacial temperature profile and threshold energy density for reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337784
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  • 6
    Electronic Resource
    Electronic Resource
    Investigations of magnetic hysteresis of barium ferrite using the torsion pendulum method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5980-5982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic stiffness is measured by the torsion pendulum method as a function of the applied field. Measurements are performed on random assemblies of chemically coprecipitated barium ferrite powders. The magnetic stiffness for both minor and major loops of the hysteresis cycle is measured and compared with calculated curves based on the model of coherent rotation. The discrepancies between theory and experiment are partly due to the effect of magnetic interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342169
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  • 7
    Electronic Resource
    Electronic Resource
    Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV-cleaved (110) InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3154-3161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements reveal that a low but nonzero barrier is present at the interface of Al deposited on ultrahigh-vacuum-cleaved n-InP (110), and that the true barrier height lies between 0.21–0.26 eV. An analysis which allows for the presence of trapped charge near the interface provides the most accurate and consistent determination of the effective barrier. The effective barrier is strongly and reversibly temperature dependent, corresponding to movement of the Fermi level with temperature. The trapped interfacial charge resides in acceptorlike electron traps 0.10 eV below the conduction-band edge. The traps are distributed 100–200 A(ring) into the space-charge region. These results are discussed in terms of models of defect electrical activity at metal-semiconductor interfaces, and are related to results of annealing studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335820
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  • 8
    Electronic Resource
    Electronic Resource
    Submicron-scale film morphology effects on media noise of CoCrTa thin films on smooth substrates : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3958-3960 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of submicron-scale morphology on media signal-to-noise ratio (SNR) has been evaluated for Cr/CoCrTa thin films deposited on super-smooth Al/NiP substrates. Two types of morphology and topography variations were studied. First, the underlayer X was made either smooth or rough in the submicron scale, and the subsequent Cr and magnetic layers deposition replicated the topography of layer X. For the second case, two different buffer layers were deposited with flat and smooth topography in the submicron scale. The subsequently deposited Cr/CoCrTa layers are either morphologically homogeneous or inhomogeneous. In both cases SNR measurements show a dramatic dependence on the morphology. It is concluded that the submicron-scale morphology variation was a profound contributor to the difference in media SNR. To make high-performance ultrahigh-density media, morphology homogeneity in the submicron-scale is essential. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365022
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  • 9
    Electronic Resource
    Electronic Resource
    Addition of N2 as a polymer deposition inhibitor in CH4/H2 electrocyclotron resonance plasma etching of Hg1−xCdxTe (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3750-3752 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition in etching compound semiconductor with CH4/H2 based plasmas. We find that atomic nitrogen, created by the addition of N2 to the plasma, inhibits polymer deposition in the chamber and on the sample. Atomic nitrogen has several beneficial effects; the elimination of polymer precursors, the reduction of the atomic hydrogen concentration, and a potential increase of methyl radical concentration. It is also demonstrated that the addition of N2 to CH4/H2 based electrocyclotron resonance plasmas used to etch HgCdTe eliminates the roughness normally formed during etching. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115371
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  • 10
    Electronic Resource
    Electronic Resource
    Elastic stress relaxation in SiGe epilayers on patterned Si substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 657-659 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional analysis of the in-plane misfit stress and its elastic relaxation in rectangular patterned heteroepitaxial SiGe/Si multilayer structures on Si substrate is presented. Based on the model of relaxing film stress the distribution of the misfit stress versus distance from the free surface of a multilayered mesa edge is calculated. By superposition of the isolated stress fields of the mesa edges, the biaxial misfit stress distribution in a finite heteroepitaxial thin-film structure on thick substrate is obtained. The formalism developed permits the determination of the variation of misfit stress values as a function of material and size characteristics of the patterned multilayer-substrate system. An elementary application of the theoretical analysis of the biaxial state of stress existing in the structured layer system is discussed briefly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355810
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