ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The insertion of a multi-photon absorber within a laser cavity has practical importance in providing stabilised laser amplitude and variable pulse duration. We report the relative non-linear absorption coefficients of semiconductors Si, CdSe, CdTe, and GaAs at 1.064μm using a Q-switched Nd:YAG laser. The measurements on Si were carried out from 77 to 450° K, and the results confirm a stepwise process giving rise to induced absorption. The effects of the spatial and temporal distributions of the laser emission on the absolute non-linear coefficient values are briefly discussed. Preliminary observation of stepwise multi-photon absorption in aqueous PrCl3 and NdCl3 measured with a pulsed Nd:glass laser is also reported. The possibility of using a combination of inducible and saturable absorbers, placed within the laser cavity, as a means of providing laser intensities confined to a narrow range centred about a pre-set intensity, is raised.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01834681
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