ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
When biased in the active region at high collector voltages, AlGaAs/GaAs single heterojunction bipolar transistors have been observed to emit light in the 1.1–2.5 eV energy range. The spectral distribution of the emitted radiation results from the superimposition of (i) two peaks at about 1.4 and 2.1 eV, due to band-to-band recombination of cold electrons and holes, and (ii) a nearly exponential tail due to hot-electron-induced electroluminescence, whose intensity depends on reverse collector-base voltage. Moreover, a linear correlation has been found between the intensity of the hot-electron-induced electroluminescence and the current generated by impact ionization.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108943
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