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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of two simultaneous second-order reactions occurring in different zones (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 2473-2479 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100590a006
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  • 2
    Electronic Resource
    Electronic Resource
    Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3314-3318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition from mixtures of tetramethylsilane with oxygen. The films have been characterized as-deposited and after annealing at 400 °C to determine the thermal stability of their properties. Rutherford backscattering and forward recoil elastic scattering have been used for determination of the composition of the films. Optical properties were characterized by Fourier transform infrared spectroscopy and measurements of the index of refraction and optical gap. The electrical properties were measured in a Si/insulator/metal configuration. It has been found that the index of refraction decreases and the optical gap and dielectric constant increase with increasing oxygen concentration in the gas feed. While the materials did not show a mass or composition loss after annealing, the annealing resulted in a reduction of the dielectric constant of the films. Dielectric constants as low as 3.1 have been obtained after annealing the film deposited from pure tetramethylsilane. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369677
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  • 3
    Electronic Resource
    Electronic Resource
    Inhomogeneous carbon bonding in hydrogenated amorphous carbon films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2874-2877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard-carbon films prepared by the rf-plasma decomposition of acetylene have been investigated by high-resolution 13C nuclear magnetic resonance spectroscopy, x-ray photoelectron spectroscopy (XPS), and the H(15Nα,γ)C nuclear resonant reaction. It was found that the ratio of sp2:sp3 bound carbon was 1.6, and that virtually all sp3 carbon atoms are, in fact, bound to one or more hydrogen atoms. Bulk layers contain about 40% hydrogen; however, results of the measurements of the hydrogen concentration, as well as those of XPS, confirm that the composition and properties of these carbon films are a strong function of their distance from the initial growth interface, and are spatially varying over the first 40 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337883
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  • 4
    Electronic Resource
    Electronic Resource
    Ship Boundary Layers (1979)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 11 (1979), S. 173-205 
    Details
    ISSN: 0066-4189
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.fl.11.010179.001133
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  • 5
    Electronic Resource
    Electronic Resource
    Wafer temperature measurements and end-point detection during plasma etching by thermal imaging (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal imaging by an infrared television camera has been successfully employed as an in situ method for end-point detection during plasma etching of polycrystalline silicon layers on a SiO2/Si substrate. In addition, it is also shown that thermal imaging can be used for remote sensing of etch rate, heat of reaction, wafer temperature, and for measuring thermal time constants during plasma etching. From these measurements, the heat-transfer coefficient of the thermal contact between the silicon wafer and the water-cooled electrode can be determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105480
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  • 6
    Electronic Resource
    Electronic Resource
    Sensitive plasma etching endpoint detection using tunable diode laser absorption spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the use of a tunable diode laser locked to a molecular vibrational absorption line as a sensitive plasma etching endpoint detector. Measurements were made on multilayer silicon wafers etched in a SF6 plasma discharge. We show that polycrystalline silicon to silicon dioxide endpoint transitions on wafers with exposed area as small as 33 mm2 should be observable by detecting the etch end product SiF4. The method shows considerable potential as an endpoint detection technique for applications such as contact hole etching wherein very small areas are being etched.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111468
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  • 7
    Electronic Resource
    Electronic Resource
    Reactive ion etching end-point determination by plasma impedance monitoring (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impedance monitoring of a rf glow discharge is successfully used to determine the end point of reactive ion etching. The feasibility of using this technique is demonstrated on diode, triode, and magnetic multipole enhanced triode reactors applied to etching polycrystalline silicon on SiO2 on Si and Si3N4 on Si in an SF6 plasma, and to stripping photoresist on Al on Si in an O2 plasma. The end point of etching is determined by monitoring changes in the induced dc bias, the rf voltage, the rf current, or the phase relationship between them on either of the powered electrodes (in the cases of the triode configurations). This method is easily applicable as in in-process end-point detector and eliminates the need of optical access to either the plasma or the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108361
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic multipole-based reactive ion etching reactor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2335-2337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of a simple inexpensive magnetic multipole to a parallel plate triode results in a magnetic enhanced etch reactor configuration that has impressive low pressure characteristics. The multipole electrode which is in the form of a cylindrical multipolar bucket, open at both ends, is added to the powered electrode of the triode being employed as a plasma etching system. The multipole becomes, in effect, an extension of the ground shield, surrounding either electrode. The resulting electrode configuration produces an extremely uniform, dense plasma at pressures as low as 2–3×10−4 Torr. The effect of the magnetic enhancement (electron containment, uniformity profile modification, and low substrate bias) is particularly pronounced at lower pressures. Significant improvement over existing triode schemes is obtained using the grounded cylindrical multipolar bucket as an extension of the ground shield of the driven electrode (not the substrate electrode). This system is considerably simpler than dual frequency driven trielectrode systems since it uses 13.56 MHz excitation of both electrodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107018
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of diamondlike carbon by infrared spectroscopy? (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2089-2091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of Fourier transform infrared (FTIR) absorption spectroscopy, high resolution 13C nuclear magnetic resonance spectroscopy, and hydrogen evaluation by forward recoil elastic scattering (FRES) measurements shows that FTIR cannot be used to determine the carbon hybridization or total hydrogen content of diamondlike carbon films (DLC). FTIR absorption reflects only the optically active hydrogen in the DLC and, using it together with FRES, it can provide an estimate of the unbound hydrogen contained in the films. The fraction of unbound hydrogen can reach values of up to ∼50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107098
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  • 10
    Electronic Resource
    Electronic Resource
    Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 803-805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392976
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