Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1302-1304
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In the Si+-implanted GaAs, the concentration of vacancy-type defects decreased monotonically with increasing depth below the surface. In B+- and As+-implanted Si substrates, parabolic-type distributions of vacancy-type defects were observed. The present work demonstrates that the monoenergetic positron technique is a very powerful tool for the study of vacancy-type defects near surfaces in semiconductor processes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100003
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