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  • 1
    Electronic Resource
    Electronic Resource
    CoNbFe soft magnetic thin-film backlayers for glass computer disks : 35TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS San Diego, California (USA) 29 Oct−1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5178-5180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co84Nb12Fe4 films with very low coercivity down to 1 A/m, anisotropy field 1100 A/m, and saturation magnetic induction 1.1 T have been deposited by rf sputtering onto chemically strengthened glass disk substrates as a backlayer for perpendicular recording Winchester disks. Values of coercivity and anisotropy field were studied over a thickness range from 30 to 15 000 A(ring) and found to be a strong function of film thickness. Comparisons between Néel's prediction for wall motion coercivity mechanism and the experimental data were made. The experimental coercivity fits the Néel formula when films are thicker than 400 A(ring). The dependence of coercivity and anisotropy field on deposition conditions was also characterized. The thermal stability of the films was studied by differential scanning calorimetry (DSC) and by thermal annealing up to 500 °C. The crystallization temperature of the CoNbFe films is about 450 °C determined from DSC analysis. Thermal annealing revealed that the magnetic properties were very stable when the annealing temperature was below 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348119
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic force microscopy and micromagnetic study of cross-tie wall structures in Co91Nb6Zr3 amorphous thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1096-1102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution images of cross-tie domain wall structures have been obtained by magnetic force microscopy (MFM) for a 37.5 nm Co91Nb6Zr3 film using a NiFe thin film coated tip. Between successive cross ties, the main or spinal wall was found to be consistently subdivided unequally into pairs of oppositely oriented Néel wall sections separated by circular Bloch lines. Main and wing walls intersect at cross Bloch lines. A reversed-contrast MFM image of the same uneven cross-tie wall structure was obtained after reversing the tip magnetization. MFM images reflect only the field from the divergence of the underlying magnetization M and contain no direct information on curl M. Accordingly they are best interpreted by comparison with the magnetization pattern of a similar cross-tie structure obtained by micromagnetic computation. This enables the cross and circular Bloch line singularities to be distinguished in the MFM images of the cross-tie structure. By combining repeated observations made with opposite tip magnetizations, disturbance of the main and wing wall structures by the tip was extracted from the MFM signal which was then compared with the signal computed for a two-dimensional model wall. The main wall was found to be an asymmetric Néel wall with a weak S shaped magnetic structure. The wing walls were found to be Néel walls of acute angle, decreasing with distance from the spine. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371985
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  • 3
    Electronic Resource
    Electronic Resource
    Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8113-8121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of electronic transport properties of p-Si wafers intentionally contaminated with Fe was performed using infrared photothermal radiometry (PTR) and microwave photoconductance decay (μ-PCD). Strong correlations were found between PTR and μ-PCD lifetimes in a lightly contaminated wafer with no significant PTR transient behavior. The absolute PTR lifetime values were larger than the local averaged μ-PCD values, due to the different excitation wavelengths and probe depths. In a heavily contaminated wafer the μ-PCD and PTR lifetime correlation was poorer. PTR measurements were highly sensitive to iron concentration, most likely due to the dependence of the bulk recombination lifetime on it. Rapid-scanned (nonsteady-state) PTR images of the wafer surface exhibited strong correlations with both μ-PCD lifetime and [Fe] concentration images in both heavily and lightly contaminated wafers. For the lightly and uniformly contaminated wafer, PTR scanning imaging was found to be more sensitive to iron concentration and lifetime variations than μ-PCD images. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373506
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  • 4
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy on {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 601-608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plan-view and cross-sectional transmission electron microscopy have been used to study the microstructural evolution of {113} rodlike defects as well as their correlation with the formation of {111} dislocation loops in silicon implanted with 50 keV 3.6×1014 Si+/cm2 8.0 mA and rapid thermally annealed at temperatures ranging from 500 °C to 1100 °C for various times. It was determined that the size distribution of {113} defects is a log-normal Gaussian probability function. The nucleation, growth and dissolution of both {113} defects and {111} dislocation loops were observed. The nuclei of {113} defects form first and are circular interstitial clusters. The nucleation is homogeneous in the matrix at the crystalline side of the amorphous/crystalline interface and occurs at a temperature as low as 600 °C for 1 s. These circular nuclei grow into rods along the 〈110〉 direction in a {113} habit plane. It was found that the growth of {113} defects inclined to wafer surface is more preferable than that parallel to the surface. Similarly their dissolution is also faster. The dissolution strongly depends on annealing temperature. Most of them can last for more than 240 s at 800 °C but only 15 s at 900 °C. It was found that the formation of {111} faulted Frank dislocation loops is an independent event of nucleation and growth. This nucleation of {111} Frank dislocation loops does not occur until the {113} defects begin to grow along a 〈110〉 direction and/or dissolve into the matrix. This means that there is a period when {113} defects release interstitial point defects before the {111} dislocation loops nucleate from the matrix. The growth of {111} dislocation loops, together with {113} defects, is a nonconservative Ostwald ripening process. The {113} defects were found to disappear completely at 900 °C for 120 s, but the {111} dislocation loops disappear at 1100 °C for 60 s. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365587
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  • 5
    Electronic Resource
    Electronic Resource
    Doping effects of 3D metal on single-phase YBa2Cu3O7−δ (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3589-3592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measurements of x-ray diffraction, the temperature dependence of the dc resistance and the ac susceptibility have been performed for the single-phase 3D-metal doping systems YBa2 Cu3−x Mx Oy (M=Fe, Co, and Ni; x=0.025, 0.05, 0.075, 0.10, 0.25, and 0.50 for Ni and Co and 0.05, 0.075, 0.10, 0.15, and 0.20 for Fe). With an increase of impurity content, two structural transitions were observed for the Co and Fe dopants but only one for the Ni dopant. The resistivity in the normal state changes from metallic to semiconductinglike behavior and the depression of Tc is linear with the impurity concentration (x) when x〈0.10. A weak Curie–Weiss type paramagnetism, which is enhanced with impurity content, exists in the samples studied. Incorporating other work on oxygen defects, we suggest that a change of oxygen content induced by doping was the dominant effect on superconductivity in these samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341393
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructural evolution of {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 659-661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent study indicated that transient enhanced diffusion in implanted silicon is attributed to {113} rodlike defects. We have used plan-view and cross-sectional transmission electron microscopy to study the microstructural evolution of {113} rodlike defects as well as their transition to {111} dislocation loops in heat treatment of Si-amorphized silicon. We found that {113} rodlike defects undergo three stages of change during postimplantation anneals; accumulation of point defects to form homogeneous circular interstitial clusters, growth of these clusters along the 〈110〉 direction in a {113} habit plane, and dissolution into the matrix. We observed that the nucleation of {111} dislocation loops at the amorphous/crystalline interface lags behind that of the {113} defects and occurs while the latter grow and/or dissolve. This suggests that there is a period when {113} defects release interstitial point defects before the {111} dislocation loops nucleate from matrix. The {113} defects were found to disappear completely at 900 °C for 120 s, but the {111} dislocation loops disappear at 1100 °C for 60 s. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119821
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  • 7
    Electronic Resource
    Electronic Resource
    Size distribution of end-of-range dislocation loops in silicon-implanted silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1654-1656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and distribution of end-of-range dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 and annealed at 750 °C for various times have been studied by transmission electron microscropy. The normalized distribution profile of the dislocation loops has been found to be invariant with time, based on density and size measurement. The profile is quite different from the conventional distribution profile of Oswald ripening in grain growth and precipitate coarsening. Measurement of the total number of interstitials bound in the extrinsic loops shows that the ripening is a conservative process. An explanation for the particular distribution profile is attributed to the stress field associated with the dislocation loops. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115895
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructures of phased-in Cr–Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2946-2948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of phased-in Cr–Cu/Cu/Au multilayer thin films and their solderability with high Pb-content PbSn solder (95/5%) and eutectic PbSn solder (37/63%) were studied by using cross-sectional transmission electron microscopy and scanning electron microscopy. We found that the phased-in Cr–Cu layer is intermixed and grains of both Cr and Cu are elongated along the growth direction. This special compositionally graded or functionally graded microstructure presents a lock-in effect of the Cr and Cu grains. It has succeeded in preventing the spalling of Cu3Sn in solder joints formed using the 95/5% solder, but failed in preventing the spalling of Cu6Sn5 in those formed using the eutectic solder. We suggest that the difference may be due to the different dissolution rates of the two compounds in the solders. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120224
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  • 9
    Electronic Resource
    Electronic Resource
    Spin valves with interlayer coupling domain biasing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3156-3158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin valves with structure of sub/Ta/NiFe/FeMn/NiFe/Mo/NiFe/Cu/NiFe/CrMnPt/Ta were developed. In this configuration, a longitudinal-biasing field from interlayer coupling stabilized the magnetic domains of the free layer. Planar Hall effect was used to study the magnetization reversal process of the free layer. It was shown that by adjusting the thickness of Mo layer, the interlayer coupling biasing field can provide domain stabilization and was sufficiently strong to constrain the magnetization in coherent rotation. This can prevent Barkhausen noises associated with magnetization reversal. Such a spin valve sensor structure is particularly attractive for high density read heads. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471930
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  • 10
    Electronic Resource
    Electronic Resource
    Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 78-84 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of end-of-range (EOR) dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850 °C and rapid thermal anneals at 1000 °C. We observed the ripening for two types of EOR dislocation loops. They were faulted Frank dislocation loops and perfect prismatic dislocation loops. By separating their size distribution profiles, we found that their distribution profiles are different from that of conventional Ostwald ripening for precipitates. A long tail distribution profile was formed for perfect prismatic dislocation loops. We analyzed the distribution profiles and found that the size distribution profile of faulted Frank dislocation loops could be well fitted by a normal Gaussian probability function and that of perfect prismatic dislocation loops by a log-normal Gaussian probability function. Measurement of the total number of interstitials within both types of loops shows that the ripening of EOR dislocation loops is conservative. Knowing the size-distribution profiles of the EOR dislocation loops, it was possible to perform an analysis of the ripening behavior of the two types of dislocation loops. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364099
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