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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of floating body effects in silicon-on-insulator metal-oxide-semiconductor field-effect transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3912-3919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model and experimental results are proposed to account for the floating body effects in SOI (silicon-on-insulator) MOSFETs (metal-oxide-semiconductor field-effect transistors). The model enables a quantitative description of hysteresis effects in the static characteristics and shows a strong correlation between the conductance and transconductance. It is demonstrated that an SOI MOSFET may exhibit both a negative conductance and a negative transconductance. A short-channel device may be biased in such a way that a critical phenomenon, comparable to a second-order phase transition, takes place. The major parameters and applications of these critical effects are described in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349200
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental investigation of silicon-on-insulator metal-oxide- semiconductor field-effect transistors at high magnetic field and low temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 408-415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de-Haas (SDH) oscillations as well as low-temperature measurements have been systematically performed in order to characterize thin-film silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The two-dimensional properties of the SOI MOS inversion layers highly depend on the quality of the front and buried Si-SiO2 interfaces. The influence of interface coupling on the quantized SDH oscillations is assessed. Even in 70 nm thin films, the carriers remain essentially confined to the lowest subband at an interface. Parasitic effects such as series resistance influence have been carefully examined in the case of short-channel devices. It is also shown that for submicronic devices, the attenuation of the oscillations as a function of the lateral electric field strongly increases with channel length. Eventually, it is demonstrated that unlike conventional bulk silicon MOSFETs, a fully depleted SOI MOSFET allows studying charge localization in MOS inversion layers, without needing any temperature variation to estimate the density of localized electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354124
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  • 3
    Electronic Resource
    Electronic Resource
    Self-consistent calculations in silicon carbide inversion layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2092-2097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schrödinger's and Poisson's equations have been self-consistently solved in the Hartree approximation in order to study the behavior of electron inversion layers in the cubic form of silicon carbide. The major crystalline orientations have been investigated in a large temperature range. Owing to the specific ratio between the longitudinal and transverse effective masses, it is shown that quantization as well as the subband occupation may differ from the case of silicon in a noticeable way, depending on temperature or electron density: Even for rather low electron concentrations, several subbands could be occupied at very low temperature and for (100) orientation. In addition, the average penetration depth of the inversion layer is always lower than that of silicon at room temperature, which could result in increased surface roughness scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356314
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  • 4
    Electronic Resource
    Electronic Resource
    Self-consistent quantum-mechanical calculations in ultrathin silicon-on-insulator structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5989-5995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schrödinger's and Poisson's equations have been self-consistently solved in ultrathin silicon-on-insulator (SOI) structures. The interaction between the front and back inversion layers has been studied as a function of the silicon film thickness, electron concentration, and temperature. The splitting of the subband energy levels, due to the possibility of quantum-mechanical interaction between the two inversion layers, strongly depends on the silicon film thickness tSi. The total subband structure can qualitatively vary with the applied gate voltages. For the thinnest devices (tSi〈15 nm), volume inversion may occur even for rather large electron concentration and low temperature. For intermediate SOI thicknesses (tSi(approximately-equal-to)15–50 nm), many more subbands are populated in SOI structures than in their bulk silicon counterparts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358382
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  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 610-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the electrical transport in (Si/CaF2)n superlattices with n=100 and with Si, CaF2 thickness in each period in the range of 1.2–1.6 nm (Si) and below 1 nm (CaF2), respectively. The results suggest that at gate voltages higher than ±4 V a Poole–Frenkel-type mechanism accounts for the observed electric-field-assisted conduction through the layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330551
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  • 6
    Electronic Resource
    Electronic Resource
    Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2723-2724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The standard deviation σs of the surface potential fluctuations affecting metal–oxide–silicon carbide capacitors has been extracted from low frequency conductance and capacitance measurements. These fluctuations may become very large for thermal oxides and aluminum-doped epilayers. They must induce large errors in usual metal–oxide–semiconductor characterization techniques and are most probably the main reason for observing an activated transport in silicon carbide inversion layers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112547
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  • 7
    Electronic Resource
    Electronic Resource
    On the mobility of n-channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 73-75 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factors affecting the channel mobility of metal–oxide–semiconductor transistors fabricated using as-deposited rapid thermal chemical vapor deposition (RTCVD) of silicon dioxide are investigated and compared to thermal silicon dioxide at various temperatures. The results indicate that the observed differences in the mobility values of thermal and rapid thermal chemical vapor deposed oxides at channel concentrations where Coulombic scattering is important is due to increased oxide trapping in the RTCVD films. It was also observed that the rapid thermal chemical vapor deposited oxides exhibited slightly larger mobility degradation rates at high fields when compared to thermal oxides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114149
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  • 8
    Electronic Resource
    Electronic Resource
    Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2076-2078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) from silicon nanocrystals in Si/CaF2 superlattices grown by molecular-beam epitaxy at room temperature was investigated and compared with that obtained from silicon nanocrystals in Si/SiO2 superlattices. EL spectra exhibited current-tunability, similar to that observed in silicon nanocrystals in SiO2, which was attributed to three main effects: (a) Auger quenching of photoluminescence, which occurs when more than one electron-hole pair is present in the same nanocrystal and which quenches luminescence from relatively larger nanocrystals, (b) size-dependent carrier injection, and (c) the effect of the applied field, when this one is significantly high. In the case of Si/CaF2 superlattices, this last factor did not apply, so the two other factors are mainly at the origin of the effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405004
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  • 9
    Electronic Resource
    Electronic Resource
    Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 604-607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency capacitance and conductance measurements have been extensively performed from 1 Hz to 100 kHz and in the 293–673 K temperature range, on metal-oxide-semiconductor (MOS) capacitors made on silicon carbide material. The energy distribution of the trap time constants, capture cross sections, and interface-state density are presented. It is shown that only low-frequency and high-temperature measurements may provide the ability to scan the midgap region of the forbidden band gap. The experimental results fully confirm the feasibility of MOS devices on silicon carbide material. Furthermore, conductance measurements at high temperature indicate the presence of deep bulk levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355846
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs
    Amsterdam : Elsevier
    Solid State Electronics 35 (1992), S. 141-149 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(92)90053-F
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