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  • 1
    Electronic Resource
    Electronic Resource
    Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4349-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemistry of the (NH4)2Sx-treated n-GaAs (100) surfaces has been studied using synchrotron radiation photoemission spectroscopy. Ga 3d, As 3d, and S 2p photoemission spectra are measured before and after annealing in vacuum with a photon energy of about 210 eV, where S 2p core level spectra can be sensitively detected. It is found that Ga-S, As-S, and S-S bonds are formed on the as-treated GaAs surfaces, and that stable Ga-S bonds become dominant after annealing at 360 °C for 10 min in vacuum. The thickness of the surface sulfide layer is reduced from about 0.5 to 0.3 nm by annealing. The surface Fermi- level position of the as-treated surfaces is determined to be about 0.8 eV below the conduction band minimum, which is about 0.1 eV closer to the valence band maximum than that of the untreated surfaces. A Fermi-level shift of 0.3 eV toward a flat band condition is also observed after annealing. It is found that the Ga-S bonding plays an important role in passivating GaAs surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348380
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  • 2
    Electronic Resource
    Electronic Resource
    Undulator-radiation-excited x-ray fluorescence analysis system for light elements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5597-5601 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An undulator-radiation-excited x-ray fluorescence analysis system for light elements has been developed and tested on the 26-period multipole wiggler/undulator beamline at the Photon Factory. An entrance-slitless optics with a variable-spacing grating was devised for a fluorescent x-ray dispersion system to achieve spectroscopic analysis with high efficiency and high resolution. Both soft x-ray emission (SXE) spectra and x-ray absorption near-edge structure (XANES) spectra with fluorescent x-ray detection were obtained by this system, taking advantage of the high brightness and quasimonochromatic character of the incident undulator beam. The analysis system was evaluated by measuring the B Kα SXE and fluorescence XANES spectra of B, BN, and B2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143388
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  • 3
    Electronic Resource
    Electronic Resource
    A compact gas scintillation proportional counter for ultrasoft x rays (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1229-1231 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A gas scintillation proportional counter has been developed for measuring ultrasoft fluorescence x rays. This counter is high-vacuum compatible for connecting to the ICF-70 flange of a vacuum chamber. A Mylar window of 0.6-μm thickness and 12-mm diameter is utilized for the entrance of the ultrasoft x rays. The counter has a large entrance window of approximately 100 mm2 and an energy resolution high enough to separate C Kα and O Kα radiations. This counter is applicable to not only x-ray fluorescence analysis, but also to fluorescence-yield extended x-ray absorption fine structure measurement of ultralow-Z elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144121
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray standing wave study of a Si-adsorbed GaAs(001) surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3731-3733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption site of Si atoms deposited on a GaAs(001)-(2×4) surface at 400 °C was investigated by back-reflection x-ray standing wave analysis using asymmetric (111) and (11¯1) reflections. It was concluded that Si atoms occupy both As and Ga sites. The occupancy of Si atoms in the Ga site and the As site was estimated to be about 75% and 25%, respectively. The As coverage on a GaAs(001)-(2×4) clean surface of 0.75 may be related to the occupancy of Si atoms in the Ga site. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115988
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  • 5
    Electronic Resource
    Electronic Resource
    rf-plasma oxidation process of Pb alloy performed using oxygen isotope observed by secondary ion mass spectroscopic analysis (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3195-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observation is made on the rf-plasma oxidation process of a Pb alloy across the priorly existing thermal oxide. This is carried out through the analyses of the ultrathin (several nanometers) oxide formed by the oxygen isotope with the secondary ion mass spectroscopy. It shows that a good deal of oxygen arriving at the oxygen–oxide interface remains and forms oxides in the outer portion of the oxide. Hence the interstitial or substitutional transport of metal ions or substitutional transport of oxygen ions through the thermal oxide is more important than the oxygen-ion interstitial transport that has been considered responsible for rf-plasma oxidation. Furthermore, it is elucidated that the thermal oxide remains even after rf-plasma oxidation except for a probable slight decrease due to sputtering in the early stages of rf-plasma oxidation. This explains the importance of the thermal oxide in determining the properties of the oxide as a whole.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335828
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  • 6
    Electronic Resource
    Electronic Resource
    Surface and interface structures of S-passivated GaAs(111) studied by soft x-ray standing waves (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3247-3249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface and interface structures of S-passivated GaAs(111)A and (111)B with and without CaF2 overlayers have been investigated using the soft x-ray standing-wave technique. On the GaAs(111)A surface S atoms are located on top of the first layer Ga atoms, while on the GaAs(111)B surface S atoms replace the first layer As atoms. This is in agreement with the photoemission results. It is found that CaF2 deposition and post-annealing does not change the position of S atoms. A well-ordered S structure for S/GaAs(111)B is maintained, indicating a high stability of S—Ga bonds. This is in contrast to the low coherent fraction for the S interlayer atoms observed from the CaF2/S/GaAs(111)A system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106708
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  • 7
    Electronic Resource
    Electronic Resource
    An ultrahigh vacuum goniometer system equipped with a Si(Li) array detector for soft x-ray standing-wave experiments (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2976-2979 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh vacuum compatible goniometer system has been developed for use in angle-scan standing-wave experiments in a soft x-ray region. This system uses a horizontal two-axis (theta and two-theta) goniometer for the x-ray diffractometer. The theta axle used for sample rotations is inserted into the vacuum chamber through a differentially pumped rotary feedthrough and is driven by a stepping motor. To detect x-ray fluorescence excited by x-ray standing waves, a three-element linear-array Si(Li) detector is equipped for this system. SKα fluorescence angular yield from monolayer-order sulfur atoms on a GaAs(111) surface could be measured for the first time by the angle-scan standing-wave experiment. This result demonstrates that this goniometer system can be used for angle-scan standing-wave experiments in the soft x-ray region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142192
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  • 8
    Electronic Resource
    Electronic Resource
    An ultrasoft x-ray fluorescence detector for EXAFS measurements on low-Z elements (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 58-61 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh vacuum compatible x-ray detector has been developed for measuring the extended x-ray absorption fine structure (EXAFS) of low-Z elements (C,N,O) by fluorescence yield detection. The detector is a type of gas scintillation proportional counter, with a better energy resolution than conventional gas proportional counters. Two Mylar windows of 0.6 μm thickness and 36 mm diameter in series, in combination with a differential pumping system, were utilized for the entrance of ultrasoft x-ray fluorescence. The energy resolution (full width half maximum) of 46% at 183 eV was confirmed by measuring the boron Kα pulse height distribution curve. Fluorescence yield EXAFS spectra, with high signal-to-background ratios, were obtained above O and N K edges of thin SiO2 and Si3N4 films for the first time by using this detector. These results demonstrate that the newly developed detector with improved energy resolution is extremely useful for fluorescence yield EXAFS measurements of low-Z atoms on the surface and in the bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142282
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  • 9
    Electronic Resource
    Electronic Resource
    Initial stages of InAs deposition on SrF2-coated EuBa2Cu3O7−y thin-film superconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5212-5216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial stages of InAs deposition on EuBa2Cu3O7−y (EBCO) thin-film superconductors with a SrF2 interlayer are investigated by using synchrotron-radiation photoelectron spectroscopy. Core-level and valence-band spectra can give imformation on both oxidation of InAs and reduction of the underlying EBCO with a very thin surface layer. These spectral evolutions demonstrate that SrF2 does not affect the underlying EBCO, and that the two-step growth procedure, comprising the initial InAs layer growth at room temperature and the top InAs layer growth at 200 °C, is effective in suppressing the interfacial redox reactions. Furthermore, cross-sectional transmission electron microscopy and x-ray-diffraction studies comfirm that SrF2 forms a uniform layer on the EBCO surface, and that the two-step growth process can crystallize an InAs top layer, which is highly (111) oriented with a full width at half-maximum of 0.25°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354260
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  • 10
    Electronic Resource
    Electronic Resource
    Real-time analysis for MBE by time-resolved core-level photoelectron spectroscopy (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1026-1028 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A system has been developed for the real-time analysis of surface reactions during molecular beam epitaxial growth which uses photoelectron spectroscopy with VUV light taken from synchrotron radiation. This system consists of a synchrotron radiation beamline and growth/analysis apparatus in which photoelectron spectroscopy is performed with sub-second time resolution. In this system, photoelectron spectra are measured in sequence by a `non-scanning' measurement method that enables the acquisition of snapshot photoelectron spectra using a multi-channel detector. This non-scanning measurement method was enabled by equipping an electric field correction grid. This system was used to monitor the photoelectron spectra of a GaSb(001) surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049597014799
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