ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the design of ion-implanted propagation tracks with a 2-μm period. Reducing cell size causes increased drive field and margin degradation due to adjacent loop interaction. We investigated the effect of ion-implanted layer properties on these problems. Using conventional photolithography, we fabricated propagation tracks on YSmLuCaGeFeO films with 0.5–0.7 μm bubble diameters by triple implantation of hydrogen and neon ions. After implantation, we exposed the wafers to argon plasma to increase the implantation-induced anisotropy field change (ΔHk), then coated them with rf-sputtered SiO2 film. We next annealed the coated wafers at temperatures ranging from 350 °C to 450 °C. To investigate the effect of the implanted layer thickness and its ratio to LPE film thickness, we proportionally varied the energies of triple implantation at a constant dose. The interaction between adjacent loops and the minimum drive field decreased as the implanted layer thickness decreased. Furthermore, we found that we could reduce the difference in bias field margin between the ion-implanted track and the Permalloy track by decreasing the implanted layer thickness without margin loss. This makes possible to realize high density hybrid devices. A minimum drive field of 38 Oe and bias margin of 68 Oe at a quasi-static drive field of 50 Oe have been obtained. Although the required drive field was larger than that of 4-μm-period tracks, we believe it can be reduced by optimizing LPE film properties and implantation conditions. Inside and outside turns, necessary in folded minor loops, have been successfully designed. Details of designs, including pattern shapes, will be discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334678
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