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  • 1
    Electronic Resource
    Electronic Resource
    Effects of a new stacking method on characteristics of multilayered BaTiO3 thin film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3744-3748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new deposition method used to prepare BaTiO3 thin films resulted in multilayered structure with higher dielectric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decreased the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a multilayered amorphous/microcrystalline/polycrystalline structure, the nature of which was confirmed by scanning electron microscopy and index of refraction measurement. Well-defined ferroelectric hysteresis loops were observed as well with insignificant leakage current effects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361208
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of buffer layer on the structural and electrical properties of (BaSr)TiO3 thin films deposited on indium tin oxide-coated glass substrate by using a rf magnetron sputtering method (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4316-4322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y2O3 and Si3N4 layers of 50–60 nm thickness were employed as a buffer layer to improve the electrical characteristics between (BaSr)TiO3 thin film and ITO-coated glass substrate. Films were deposited by a rf magnetron sputtering method. In order to investigate the influence of the buffer layer on the structural and electrical properties, XRD, SEM, and SIMS analysis were conducted, and dielectric constant (ε'), dissipation factor (tan δ), voltage-current (V-I), and breakdown fields were measured as a function of (BaSr)TiO3 film thickness. From the results of the SEM and SIMS measurements, it was observed that the buffer layers reduced the influences of the substrate on grown films. Even though the dielectric constant of (BaSr)TiO3 film (440 nm in thickness) was lowered from 238–249 (nonbuffered) to 73–81 (Y2O3 buffered) and 37–43 (Si3N4 buffered) by adopting a buffer layer, the dissipation factor and leakage currents were significantly reduced, which could be explained by the decrease of oxygen diffusion due to the buffer layer. It was also shown that the shift of the breakdown field maximum toward thinner film and the increase of breakdown field occurred by adopting a buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357317
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  • 3
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of rf magnetron-sputtered Ba1−xSrxTiO3 thin films on indium-tin-oxide-coated glass substrate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7998-8003 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and electrical properties of rf magnetron-sputtered Ba1−xSrxTiO3 thin films (x=0, 0.25, 0.5, 0.75, 1) on indium-tin-oxide-coated glass substrate were studied. The dense Ba1−xSrxTiO3 thin films sputtered from five different targets at the deposition temperature of 550 °C had individual orientations. The results of compositional analysis in films showed the deviation from the stoichiometry [(Ba+Sr)/Ti=1.009−1.089] with the increase of SrTiO3 content in the targets. The tetragonality in crystallographic structure of Ba1−xSrxTiO3 thin films was not observed even in the case of 〈x=0.3. The large frequency and composition dependence of ε' and tan δ were also observed. There were no significant changes in ε' up to x=0.5; however, the maximum value (ε'=204 at 100 kHz) around x=0.25 was in accordance with the results of bulk Ba1−xSrxTiO3 except at 1000 kHz. Above x=0.5, however, larger decreases of the dielectric constant were observed. The maximum values of ε' in x=0.25, 0.5, 0.75 were shown around the measuring temperatures of 50, 25, −20 °C, respectively, indicating the diffuse phase transition in Ba1−xSrxTiO3 thin films. The observed increases in ε' and tan δ above 125 °C are well explained with the barrier model. Nonlinear current-voltage characteristics in Ba1−xSrxTiO3 thin films showed that the lower the SrTiO3 content, the leakier Ba1−xSrxTiO3 thin films became, and the increase of SrTiO3 content leads to the increase of the breakdown fields from 1.7 to 2.7 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356537
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  • 4
    Electronic Resource
    Electronic Resource
    Long-term conduction behavior of white-light emitting ZnS-based phosphor films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 380-386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate systematically the causes of the aging of thin film electroluminescent devices, time-dependent current–voltage characteristics of doubly doped ZnS:Pr, Ce, Mn layer has been investigated under a direct current high field as one of the accelerated aging methods. The surface roughness along to the direction perpendicular to the indium-tin-oxide–glass substrate and the high peak-to-valley roughness are assumed to be the main sources for current fluctuations during the measurement. It was observed that the leakage current level after long-term stressing increased or decreased depending on post-treatment indicating that the bulk-controlled conduction was the dominant mechanism determining long-term behavior and this mechanism is not sensitive to the variations in the deposition parameters. The experimental results indicate the fact that the long-term conduction behavior of ZnS-based film may be related to defect redistribution after lowering barrier height during initial stressing. Finally, we suggest that an enhancement of contact adhesions via surface smoothing of the upper interface can contribute to the long-term stability. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370742
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  • 5
    Electronic Resource
    Electronic Resource
    Role and effect of Co2O3 additive on the upturn characteristics of ZnO varistors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3231-3235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Co2O3 additions on the characteristics of electric field-current density was investigated at high current densities. With the increase of mole % of Co2O3, the onset of voltage upturn descends to lower current density due to the decrease in the conductivity in ZnO grains. This is confirmed by impedance measurements at high frequencies. Analysis on the capacitance-voltage characteristics shows that the decreased grain conductivity is attributed to the lower carrier density caused by the reduced concentration of interstitial Zni or oxygen vacancy, VO. In the case of the highly doped ZnO varistors containing more than 0.5 mole % Co2O3, the lowered carrier mobility improves the decrease in grain conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335803
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  • 6
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance characteristics of the Mn activator in a ZnS:Mn electroluminescent device (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7042-7045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electron paramagnetic resonance (EPR) results on the characteristics of the Mn activator in a ZnS:Mn thin film as a function of the film processing conditions. From the x-ray diffraction and EPR measurements of Mn in both ZnS:Mn powder and thin films deposited at the different substrate temperature and thermally treated in the vacuum, it was found that the effective Mn2+ concentration in a ZnS:Mn electroluminescent device could be changed by the annealing process, as well as the substrate temperature, during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349781
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  • 7
    Electronic Resource
    Electronic Resource
    Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 962-964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O3-SnO2(ITO) side to improve the aging characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104456
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  • 8
    Electronic Resource
    Electronic Resource
    Deposition of hydrogen-free diamond-like carbon film by plasma enhanced chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3594-3595 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-free diamond-like carbon (DLC) films were deposited by the layer-by-layer technique using plasma enhanced chemical vapor deposition (PECVD), i.e., the alternative deposition of thin DLC layer and subsequent CF4 plasma exposure on its surface. The hydrogen-free DLC could be grown on the Si wafer by repeated deposition of the 5 nm DLC layer and subsequent 200 s CF4 plasma exposure on its surface. On the other hand, the conventional DLC deposited by PECVD contains 25 at. % hydrogen inside. The CF4 plasma exposure on the thin DLC layer appears to etch weak C–C bonds and break hydrogen bonds, resulting in a widening optical band gap and increasing conductivity activation energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116648
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  • 9
    Electronic Resource
    Electronic Resource
    Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 457-460 (June 2004), p. 625-628 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.457-460.625.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Fluoride Releasing from Dental Pit and Fissure Sealant Including Sodium Fluorideand Stannous Fluoride (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 342-343 (July 2007), p. 893-896 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The 2% NaF and 8% SnF2 have been used in topical fluoridation method in the dentaloffice to increase the resistance of enamel to acid dissolution. Bis-GMA based monomers have beenused for the basic materials in the dental pit and fissure sealants. Therefore, the resinous pit andfissure sealant including fluorides may increase the effect of preventing dental caries. In this study,we made a novel dental pit and fissure sealant and evaluated some properties, especially fluoriderelease. In order to make experimental pit and fissure sealant including fluoride, NaF and SnF2powder were added into self-made monomer composed of Bis-GMA, TEGDMA, UDMA and photoinitiator system by weight percent of 2% and 8% respectively. The just monomer without fluoridepowder was used for control. Uncured film thickness and depth of cure were measured according toISO specification 6874:1988 and the viscosity was measured using rheometer. The five discspecimens were made using light curing unit to evaluate fluoride releasing and each specimen wasimmersed in the artificial saliva of 10 mL. Fluoride ion concentrations in extracts were measuredfor 3 days using fluoride electrode at every 12 hrs. There was no significant difference betweenexperimental and control group in the depth of cure, uncured film thickness, and viscosity (p〉0.05).The released fluoride ion concentration was continuously retained for 72 hrs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.342-343.893.pdf
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