ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
The reflectivity of a multilayered structure on top of a silicon wafer has been measured in a rapid thermal processor at 0.6328 μm. This structure consisted of a Ge thin film sandwiched between SiO2 and Si3N4 films. The wafer has been submitted to thermal cycles around the melting point of Ge (938 °C). It has been shown that the onset of Ge melting which corresponds to an abrupt reflectivity change can be detected in situ by monitoring the intensity of a reflected laser light. It has therefore been demonstrated that the detection of Ge thin-film melting can serve as a tool for temperature sensor calibration in a rapid thermal processor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1142955
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