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  • 1
    Electronic Resource
    Electronic Resource
    Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on SiO2 insulators (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6758-6762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallinity of laser-recrystallized Si films on insulators (SOI films) was characterized by micro-Raman imaging. A small-angle bevel made by angle lapping of the SOI film was used to probe the structure at different depths. The Raman signals that varied with the position along the tilt show that interference of both the incident and scattered light induced in the angle-lapped specimens results in periodic enhancements in the intensity as a function of film thickness. An analysis of the fringe patterns in the Raman images provides us with depth profiles of strain and structural disorders with a high depth resolution on a scale of a few tens of nanometers. When moving away from the interface between the silicon film and the insulator, the peak frequency of the polycrystalline silicon band shifts to the lower frequency side and the band width becomes smaller. The depth profile of the Raman feature shows that the defect density is high in the region near the interface of Si and SiO2, and that the stress increases toward the top surface of the silicon film. Moreover, a partial relaxation of the stress occurs near the interface region due to the generation of a high density of defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370190
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering of interface modes in ZnTe–CdSe superlattices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5946-5950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra have been measured for ZnTe/CdSe superlattices grown by hot wall epitaxy. A mechanical vibrational interface phonon (MVIF) mode localized at the Zn–Se interface is distinctly observed in addition to quasiconfined longitudinal optic (LO) modes. The relative intensity of the MVIF mode is increased as the period of the superlattice becomes short. Raman spectral profiles calculated by use of a linear chain model and a bond polarizability model explain this behavior qualitatively. The quasiconfined LO modes show resonant enhancement for excitations at the band gap energies of ZnTe and CdSe. The effect of atomic diffusion on the interfacial structure has been examined in thermally annealed superlattices by Raman measurement. It is shown that Raman scattering of the interface mode provides information about the interdiffusion of atoms and the sharpness of the heterointerfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363566
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  • 3
    Electronic Resource
    Electronic Resource
    Raman determination of structures of long-period SiC polytypes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5354-5360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been applied to identification of longer-period SiC polytypes. The stacking structures of 51R and 132R polytypes have been examined, the result of which is consistent with electron- and x-ray-diffraction analyses. The possibility is discussed for Raman determination of the period and stacking structure of longer period polytypes. It is demonstrated that Raman scattering is useful for the determination of the structure of SiC polytypes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355738
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  • 4
    Electronic Resource
    Electronic Resource
    High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 239-241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101000
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  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering determination of carrier distribution in GaP diodes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3067-3071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a Raman microscope we have studied Raman scattering from plasmon-LO-phonon coupled modes in the cross section of GaP diodes. The line shape analysis of the coupled mode has provided the thermal-equilibrium carrier concentration and mobility. Their distribution is determined from the spatial variation of the spectra. The carrier distribution thus obtained is consistent with that estimated from capacitance measurements. The result demonstrates that the Raman microprobe is a powerful method for determining the distribution of the carrier concentration and mobility in semiconductor devices without electric measurements using electrodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342495
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of the impulse response of a piezoelectric photoacoustic signal (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 295-299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impulse responses of the piezoelectric photoacoustic (PA) signal have been measured by using the technique of cross correlation. Experimental impulse responses of aluminum model samples are in good agreement with theoretical prediction. It is shown that thermal diffusivities of opaque materials can be determined by measured zero-crossing times of PA impulse response. Cracks in aluminum samples are detected by measuring a one-dimensional image of the impulse response of the PA signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340293
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 354-358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: LO phonon-overdamped plasmon coupled modes in n-type epitaxial films of β-SiC have been measured in the carrier concentration range from 6.9×1016 to 2×1018 cm−3. The carrier concentrations and damping constants are determined by line-shape fitting of the coupled modes and compared with the values derived from Hall measurements. The concentrations obtained from the two methods agree fairly well. The Faust–Henry coefficient determined from the fitting is 0.35. The line-shape analysis of the coupled mode has shown that the dominant scattering mechanisms in β-SiC are deformation-potential and electro-optic mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338830
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  • 8
    Electronic Resource
    Electronic Resource
    Time-resolved Raman scattering measurement of photoexcited plasmon in GaP crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3303-3308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An overdamped plasmon-LO phonon coupled mode in undoped GaP crystals has been observed under high excitation condition. We have studied the relaxation process of the coupled mode in the time range of nonoseconds using a time-resolved Raman scattering technique at 81 K. The decay time of photocreated free carriers has been estimated from line-shape fitting of the coupled mode in the time-resolved Raman spectra. The decay time obtained from the Raman study has been compared with the value obtained from luminescence measurements. The plasmon hybridized with the LO phonon is found to be a gaslike electron-hole plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337696
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  • 9
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering in ZnTe-ZnSe strained layer superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2009-2011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering and photoluminescence spectra have been measured in ZnTe-ZnSe superlattice. Strong out-going and in-coming resonant enhancements have been observed for multilongitudinal optic phonon bands of the ZnTe-like mode close to the photoluminescence band, which is assigned to direct recombination of excitons. The calculated exciton energies taking into account the effects of quantum well and strain field agree well with photoluminescence energies in superlattices with different thicknesses of the ZnTe layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339542
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  • 10
    Electronic Resource
    Electronic Resource
    Terahertz radiation from superconducting YBa2Cu3O7−δ thin films excited by femtosecond optical pulses (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2122-2124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashort electromagnetic waves (600 fs width) from superconducting YBCO thin films have been observed by irradiating current-biased samples with femtosecond optical laser pulses (80 fs width). The Fourier component of the pulse extends up to ∼2 THz. The characteristics of the radiation are studied and the radiation mechanism is ascribed to the ultrafast supercurrent modulation by the laser pulses, which induce the nonequilibrium superconductivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117175
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