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  • 1
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    Frontiers in Materials Research (2008)
    Berlin, Heidelberg : Springer
    Details
    Keywords: Biomedical engineering ; Materials ; Nanotechnology ; Optical materials ; Surfaces (Physics)
    ISBN: 9783540779681
    URL: https://doi.org/10.1007/978-3-540-77968-1
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    Calculation of stresses in InxGa1−xAs/InP strained multilayer heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5213-5219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model was proposed to calculate the stress in the multilayer heterostructures such as multiple quantum well and strained quantum well structures. The model was derived under consideration of the difference between crystalline parameters such as the lattice constant and thermal expansion coefficient of the composed crystal layers. In this model, each composed crystal layer is divided into many imaginary thin layers. The face force and strain balance was considered over all the imaginary thin layers with coherent interfaces. Using this model, the stress in the lattice-matched InP/In0.53Ga0.47As and strained InP/In0.82Ga0.18As multilayer heterostructures was calculated at 600 °C. In the multilayer, the compressive stress in the In0.53Ga0.47As and In0.82Ga0.18As layers is always larger than the tensile stress in the InP layers. The stress in the InxGa1−xAs layers decreases as the thickness of the InxGa1−xAs layers increases, and it increases by adding InP thick layers on the one side or both sides of the multilayer. The tangential and perpendicular lattice constants in the multilayer were calculated using this model. The perturbation of the InP lattice becomes smaller and that of the InGaAs lattice becomes larger by adding the thick InP layers. It is found from these results that the total stress at the InP/InGaAs heterointerface depends on only the lattice misfit, but the share of the total stress depends strongly on the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352003
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  • 3
    Electronic Resource
    Electronic Resource
    Physical model for the evaluation of solid–liquid interfacial tension in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 750-755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We proposed a simple lattice model to describe a solid–liquid interface of silicon based on experimental facts and molecular dynamics simulation results, and evaluated the relationship between the interface structure and the interfacial tension by comparing the model with experimental values. As a result, the entropy was found to give a major contribution to the interfacial tension, and it was revealed that the difference of entropy due to lattice disorder of bulk liquid and interface structure is the dominant factor of the entropy contribution. Moreover, the solid–liquid bond energy, which is crucial to estimate the contribution of the enthalpy, was successfully derived. The present model can be also applied to be the semiconductor material which has a diamond structure or a zinc blende structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379349
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of misfit dislocations and AlN buffer layer on the GaInN/GaN phase diagram of the growth mode (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 146-153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness-composition phase diagrams of the growth modes were determined for the GaInN-on-GaN (GaInN/GaN) and the GaInN-on-AlN-on-GaN (GaInN/AlN/GaN) structures. For this determination, the strain energy was calculated by considering the stress relaxation due to introduction of misfit dislocations, the surface energy was estimated from bonding enthalpy of the nearest-neighbor bonds on the surface, and the interface energy was estimated by considering both effects of the dangling bonds due to lattice misfit and the abrupt transition of bonding species at the heterointerface. From these phase diagrams, it was found that the layer-by-layer growth such as the Frank–van der Merwe mode was very difficult to obtain for the epitaxial growth of GaInN on GaN when the InN fraction is large. The Volmer–Weber mode is dominant in the phase diagram of the GaInN/GaN structures. The influence of an AlN buffer layer with a larger surface energy was studied by introducing an AlN layer between the GaInN layer and the GaN substrate. It was known that the layer-by-layer growth could be more easily obtained if misfit dislocations were introduced and an AlN layer was used as a buffer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330247
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray observation of compositional modulation caused by phase decomposition in GaInP ternary alloys (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 337-339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase decomposition of GaInP ternary alloys grown by low-pressure metalorganic vapor phase epitaxy has been investigated using x-ray diffraction. Diffuse scattering around the Bragg peaks due to compositional modulation was observed clearly for the first time, for samples containing high dislocation densities. Thermodynamically, the present growth temperature lies between the chemical and coherent spinodal lines. It is suggested that phase decomposition of the alloys occurs clearly only when the strain relaxation during crystal growth is possible under the present growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102801
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction from ordered regions in GaInP ternary alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 690-691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordered structure in GaInP alloys grown on (001) GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction and transmission electron microscopy. We found a broad peak of CuPt I type (111)B ordering in the x-ray measurements. X-ray results gave the total amount of ordered region and the average size of each ordered domain. Room-temperature photoluminescence peak energy anomalies were found to be related to the amount of the order phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101823
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray investigation of the ordered structure in AlGaInP quaternary alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2190-2192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ordered structure occurring in AlGaInP quaternary alloys grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction measurements. The order spot became strong as the Al content increased, and was observed only for the (1/2 ∼(1/2) 1/2) diffraction, corresponding to CuPt-type (111)B ordering. Kinematical analysis implies that the full width at half maximum of the order spot is strongly affected by the antiphase boundary, whereas the integrated intensity is not.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102057
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  • 8
    Electronic Resource
    Electronic Resource
    Liquid-phase epitaxial growth of very thick In1−xGaxAs layers with uniform composition by source-current-controlled method (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4626-4634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A source-current-controlled method for the continuous supply of solute elements into solutions during growth was developed. In this method, a continuous electric current is passed through a GaAs source material of the solute elements during growth and the source material is dissolved into the growth solution due to Peltier and Joule heating at the interface between the source material and the solution. This method was applied to the liquid-phase epitaxial growth of In1−xGaxAs on InP. The temperature variation of the solution was directly measured by immersing a thermocouple in the solution and a temperature gradient of more than 6 °C could easily be obtained in the solution between the GaAs source material and the InP substrate. The amount of dissolved GaAs was measured as a function of the current density. Using these results, an optimum growth condition for the continuous supply of solute elements was determined, and an 80-μm-thick In0.54Ga0.46As layer with uniform composition (x=0.458±0.002) was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338373
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  • 9
    Electronic Resource
    Electronic Resource
    The excited state dynamics of triplet 1,8-dichloroanthraquinone in solutions at room temperature (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 5698-5704 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The transient absorption spectra of the title compound (1,8-DCAQ) in solutions at room temperature have been measured by the picosecond laser photolysis, and the buildup and decay of a new absorption were observed on a picosecond time scale. The decay of this absorption was accompanied by a rate matching increase in the triplet–triplet absorption of the lowest triplet state of a ππ* character. Since the addition of 2,5-dimethyl-2,4-hexadiene (1 M) or triethylamine (2 M), as a triplet energy acceptor, quenched the new absorption, it was assigned to the second nπ* triplet state of 1,8-DCAQ with an intramolecular charge–transfer character between the chlorine and oxygen atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451529
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancement in the perfection of orthorhombic lysozyme crystals grown in a high magnetic field (10 T) (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 56 (2000), S. 1079-1083 
    Details
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Orthorhombic crystals of hen egg-white (HEW) lysozyme were grown in a homogeneous and static magnetic field of 10 T. All crystals grown at 10 T were oriented such that their crystallographic c axes were parallel to the magnetic field direction and showed a narrower average full-width at half-maximum (FWHM) of the rocking curve than those grown at 0 T. Rocking-width measurements were made at the BL-10A station at the Photon Factory, Tsukuba, Japan, using a high-resolution vertical-type four-circle diffractometer. Crystal perfection was evaluated using the FWHM of the rocking curve; the effects of the magnetic field on the quality of the crystals were examined by comparison of the FWHM of seven crystals grown at 10 and 0 T. The FWHMs of the reflections along the a, b and c axes decreased by 23.5, 35.3 and 27.8%, respectively, and those of other general reflections decreased by 17.4–42.2% in the crystals grown at high magnetic field. These results clearly showed that a magnetic field of 10 T improved the crystal perfection of the orthorhombic lysozyme crystals. As a result, the maximum resolution of X-ray diffraction increased from 1.3 Å at 0 T to 1.13 Å at 10 T. The magnetic field also affected the dimensions of the unit cell, increments being 0.2% for the a and c axes and 0.1% for the b axis, respectively. These facts suggest that the application of a high magnetic field during crystallization might result in remarkable enhancements in the diffraction power of protein crystals having magnetic anisotropy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0907444900008155
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