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  • 1
    Electronic Resource
    Electronic Resource
    Change of magnetoresistance characteristic and crystal structure by ion bombardment to interfaces in [Ni81Fe19/Cu] multilayers (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6392-6392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many practical applications using giant magnetoresistance (GMR) have been developed, such as read-out heads and spin valve devices; however, the origin of GMR is not still fully understood. The GMR effect seems to be originated from the spin scattering mechanism whether at the interfaces or at the layer bodies. Therefore, it is necessary to investigate the spin scattering behaviors at the interfaces in GMR multilayers. It is regarded that the mixing and the diffusion of atoms at the interfaces in multilayers can be well promoted by ion bombardment to the interfaces at proper energy in dual ion beam sputtering (DIBS) method. In this study, change of magnetoresistance (MR) and crystallographic characteristics induced by interfacial mixing of atoms were investigated. Specimen films were deposited by DIBS. Additional ion bombardment to the growing surfaces arranges the mixing effect at the interfaces between Ni-Fe and Cu layers. Acceleration voltage of sputtering ion source Vmg were set at 500 V and that of bombarding ion source Vsg was varied in the range of 0–300 V. Si wafers were used as substrates. Ni–Fe/Cu multilayers with GMR were deposited on 50 A(ring) thick Fe buffer layers.Only two monolayers at the interfaces in Ni–Fe/Cu multilayers were exposed to ion bombardment to cause the local interfacial mixing. X-ray diffraction diagrams, showed that (111) orientations of Ni–Fe and Cu crystallites are obtained at Vsg below 200 V and that, on the contrary, (100) orientation became dominant in the films deposited at Vsg above 200 V. There is no apparent differences in MR ratio with increase of Vsg. However, the field sensitivity and saturation field properties were drastically degraded at Vsg above 200 V, while the crystal structure seemed to be changed. These results indicate that spin scattering were mainly occurred at the layer bodies in Ni–Fe/Cu multilayers. These results implied that the interfacial mixing is not so effective for changing MR ratio of Ni–Fe/Cu multilayers. However, the behavior of magnetization vectors are much influenced by change of local structure at the interfaces. These results seem to confirm the proposed theory; i.e., the spin scattering in layer bodies is the dominant mechanism on GMR in Ni–Fe/Cu multilayers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362008
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of Co-Zn ferrite films at low substrate temperature by plasma-free dc sputtering for magnetic recording media : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5975-5977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co-Zn ferrite films with small grains for magnetic recording media at ultrahigh density were deposited "plasma free'' on a substrate by using the dc facing targets sputtering apparatus without subsequent annealing process. The films deposited at a substrate temperature Ts as low as 90 °C were composed of crystallites with excellent (111) orientation and exhibited a saturation magnetization 4πMs of 3.3 kG and an in-plane and perpendicular coercivity Hc(parallel) and Hc⊥ of 1.8 and 2.2 kOe, respectively. The films deposited at a Ts of 250 °C exhibited 4πMs of 4.8 kG and possessed almost the same Hc(parallel) and Hc⊥ of 1.5 kOe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355530
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  • 3
    Electronic Resource
    Electronic Resource
    Highly crystallized (La,Sr)MnO3 films deposited by facing targets sputtering apparatus : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5247-5249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La1−xSrxMnO3 films about 4000 A(ring) thick were deposited on thermally oxidized Si wafers, and then their crystalline orientation and magnetic characteristics were investigated. Orientation of (111) in which large ions such as O2−, La3+, and Sr2+ are most closely packed became preferential with increase of total gas pressure Ptotal and partial oxygen pressure PO2. Although spontaneous magnetization was not detected, even the film deposited at substrate temperature Ts as low as 330 °C revealed obvious orientation of (110) in which metallic ions are most closely packed. The film deposited at Ts of 500 °C, Ptotal of 2.0, and PO2 of 0.1 mTorr, and the film postannealed at 900 °C for 3 h in oxygen atmosphere possessed the saturation magnetization 4πMs of 1.2 and 3.5 kG at 77 K and their Curie temperatures were 217 and 313 K, respectively. B–H curves at 77 K revealed that the easy magnetization direction of these films was in-plane. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361300
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  • 4
    Electronic Resource
    Electronic Resource
    Theory, fabrication and testing of dual track complimentary type of thin-film recording heads for perpendicular magnetic recording system : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5910-5912 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of recording head for a perpendicular magnetic recording system, a dual track complimentary (DTC) type of thin-film head, was proposed in this study. The magnetic core of the head has a "U'' character shape which is provided with "a pair of'' recording tracks and the efficiency to detect flux reversal in the media will become high enough to achieve high linear density. The two-dimensional analysis of DTC heads implied that the perpendicular component of the head field should become larger by using the double-layered media under a narrower spacing condition. Recording characteristics using conventional ring head were evaluated in order to determine the principle of DTC configuration. Several DTC heads were prepared using photolithography technique and their performances were examined. A typical DTC head has inductance of about 500 nH, which is relatively low, and constant up to 10 MHz. DTC heads seems to be one of the most hopeful candidates as the heads useful for perpendicular magnetic recording systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362169
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  • 5
    Electronic Resource
    Electronic Resource
    Ba ferrite films with large saturation magnetization and high coercivity prepared by low-temperature sputter deposition : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5970-5972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ba ferrite films were deposited in a mixture of Xe, Ar, and O2 by using facing targets sputtering apparatus with sintered targets of Fe-excessive BaM ferrite. By using Xe as sputtering gas, the bombardment of energetic Ar atoms recoiled from target to film surface was sufficiently suppressed and Fe content in Ba ferrite crystallites was significantly increased. It was found that the segregation of spinel crystallites among BaM ones were not observed and these BaM crystallites revealed the excellent c-axis orientation normal to film plane and clear perpendicular magnetic anisotropy. At substrate temperature Ts of 600 °C, saturation magnetization 4πMs of 5.1 kG, which is larger than that of BaM ferrite single crystal, and perpendicular coercivity Hc⊥ of 2.4 kOe were obtained. BaM ferrite films composed of well c-axis oriented crystallites with large perpendicular magnetic anisotropy constant, large saturation magnetization 4πMs of 4.7 kG and high perpendicular coercivity Hc⊥ of 2.4 kOe were obtained at substrate temperature Ts as low as 475 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362123
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  • 6
    Electronic Resource
    Electronic Resource
    Theoretical analysis of the embedded layer formed by high-energy Au implantation into Si(II) : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 793-796 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We performed a high-energy and high-fluence ion implantation, expecting to fabricate micromachines. (100) Si was bombarded by 3.1 MeV Au2+ ion with a fluence of 1017/cm2 at 95 K. Then an embedded layer was extracted after chemical etching (30% KOH, at 333 K). The stoichiometric change was evaluated by both experiments and simulation using TRIDYN. The experiments showed, although qualitatively, that Au clustering occurred even at a temperature lower than had ever been reported. From a critical ion fluence, which is necessary to extract a material after etching, we estimate a local concentration to be 1.0–1.2 at. %, which caused a physicochemical change by Au doping. A probable model for the clustering is proposed. It is a nonthermal atomic transfer mechanism following the electronic excitation. Here the electronic stopping power just beneath the surface is 140 eV/Å, which is large enough to ionize valence electrons of Si. Also, a wide amorphized region supports an unstable electrostatic field, which should be produced by many odd-number member rings made of host(Si) atoms. Both ionization of Si and the unstable electrostatic field may most likely trigger the Au clustering. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150296
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrathin Si buffer layers to improve the exchange bias between Ni–Fe and FeMn layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4934-4936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni–Fe/FeMn bilayers were deposited by using dual ion beam sputtering apparatus. In order to promote (111) orientation in γ-FeMn layers and to exhibit exchange bias field Hex, Si and/or silicon nitride (Si3N4) layers were deposited as buffer layers. Although silicon nitride (Si3N4) buffer layers did not improve (111) orientation in FeMn layers, as well as in Ni–Fe layers, an amorphous Si buffer layer only 1 nm thick improved (111) orientation in FeMn layers and increased Hex to above 100 Oe. FeMn/Ni–Fe bilayers deposited on Si(0.5 nm)/Si3N4(1 nm) bilayered buffer layer also exhibited high Hex of about 130 Oe. This result implies that the ultrathin a-Si buffer layer was effective in improving (111) orientation in Ni–Fe layers. Very thin Si/Si3N4 bilayers may be applicable as dielectric layers in tunneling magnetoresistive spin valve devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370050
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  • 8
    Electronic Resource
    Electronic Resource
    Heat resistance of hydrogenated amorphous silicon films prepared by compressed magnetic field-magnetron sputtering with He and Ar gases (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3604-3606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Usually, an Ar gas adding hydrogen gas is used for the fabrication of hydrogenated amorphous silicon (a-Si:H) films by reactive sputtering. The sputtered films contain Ar atoms of more than 5 at. %. These implanted Ar+ ions degrade the film quality, and H atoms, which terminate dangling bonds, leave the film easily by heating to about 300 °C. A He atom has a lighter atomic mass and smaller atomic radius than an Ar atom. Therefore, the reactive sputtered films using the He gas will be less affected by the implanted He+ ions than they will by the implanted Ar+ ions of those sputtered by Ar gas. Infrared absorption (IR) and electron spin resonance (ESR) measurements of the films sputtered by He gas are made and compared with those sputtered by Ar gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336791
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic and structural characteristics of Fe/Al multilayers deposited by ion beam sputtering with Kr : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6444-6446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Al multilayers have been prepared by the ion beam sputtering method with use of Ar and Kr as the working gas. Sputtering by Kr ion beam deposited the multilayer with better crystallinity, smaller interdiffusion between layers, and lower electrical resistivity than sputtering by Ar ion beam. Multilayers with thicknesses of Fe and Al layers of 50–120 A(ring) and 15–20 A(ring), respectively, possessed excellent soft magnetism. Such soft magnetism seems to be related, in part, to the fine granulation in Fe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352627
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  • 10
    Electronic Resource
    Electronic Resource
    The control of magnetic characteristics of BaM ferrite thin films by bias sputtering (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6696-6696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin films of a magnetoplumbite type of barium (BaM) ferrite have been deposited on SiO2/Si substrates at a rate of 100 A(ring)/min in a gas mixture of 10% O2–90% Ar at a pressure of 2 mTorr by using the facing targets sputtering (FTS) apparatus. They possessed excellent chemical stability and high corrosion resistivity as well as perpendicular anisotropy as large as applicable for perpendicular magnetic recording media. They also seem to be applicable for millimeter wave isolator and circulator. In this study, the saturation magnetization Ms, the coercive force Hc, and the anisotropy field Hk of BaM ferrite films have been controlled by adjusting the rf-bias voltages to substrate Vb during sputtering, where Vb was always negative. The dependencies of Ms and Hc on Vb were shown in Fig. 1. Ms took the maximum value as large as 345 emu/cc at Vb of −30 V and decreased as Vb decreased in the range below −50 V. On the other hand, the perpendicular Hc decreased as Vb increased in the range above −100 V and took the minimum value as low as 910 Oe at Vb of −95 V. Hk and the magnetic anisotropy constant Ku also greatly depended on Vb. Such an apparent Vb dependence of these magnetic characteristics of BaM ferrite films seem to be attributed to the definite change in c-axis orientation of hexagonal crystallite and the different distribution of Fe3+ ions among several occupation sites. These results indicated that the c-axis orientation of BaM ferrite crystallites were promoted by applying proper Vb. Consequently, the bias sputtering technique with FTS method may be useful for preparing the BaM ferrite films composed of the multilayers with different magnetic characteristics, even if only one pair of targets are used without adjusting the other sputtering conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352506
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