Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2358-2360
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Synchrotron x-ray diffraction was employed to measure the lattice constants a and c of GaN films grown with an AlN buffer layer on sapphire (0001) over a thickness range of 50 A(ring) to 1 μm. We used multiple reflections and a least-squares fit method for high reliability. As the thickness increased, the lattice constant a increased from 3.133 A(ring) to 3.196 A(ring) and c decreased from 5.226 A(ring) to 5.183 A(ring). The expected trend was fitted to an equilibrium theory, allowing the critical thickness of GaN on AlN to be estimated at 29 A(ring) ± 4 A(ring) in good agreement with a theoretical prediction. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117524
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