ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h)with respect to the standard process with the introduction of HCl in the deposition chamber. Theepitaxial layers grown with the addition of HCl have been characterized by electrical, optical andstructural characterization methods. An optimized process without the addition of HCl is reportedfor comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the additionof HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial processwith the advantage of an epitaxial growth rate three times higher
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.163.pdf
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