Publication Date:
2011-02-05
Description:
Author(s): Kazuhiro Marumoto, Norimichi Arai, Hiromasa Goto, Masashi Kijima, Kouichi Murakami, Yukihiro Tominari, Jun Takeya, Yukihiro Shimoi, Hisaaki Tanaka, Shin-ichi Kuroda, Toshihiko Kaji, Takao Nishikawa, Taishi Takenobu, and Yoshihiro Iwasa The microscopic mechanisms behind the very high mobility in rubrene single-crystal transistors achieved by interface treatments with self-assembled monolayers (SAMs) have been clarified by using field-induced electron spin resonance (FI-ESR). Clearly observed FI-ESR signals exhibit extremely narrow ... [Phys. Rev. B 83, 075302] Published Fri Feb 04, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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