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  • 1
    Electronic Resource
    Electronic Resource
    Electrically active defects in silicon after excimer laser processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3934-3937 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is the first which clearly demonstrates, by deep-level transient spectroscopy analysis in a Schottky structure, the presence of excimer laser-related defects in both n- and p-type virgin monocrystalline silicon. The detected point defects are correlated to those observed after solid-state laser (ruby, YAG) annealing in silicon. The main part of these traps could be attributed to the melt-related defects produced by the fast quenching rate in pulsed laser treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344021
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  • 2
    Electronic Resource
    Electronic Resource
    On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 666-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the solid phase epitaxial regrowth (SPER) of implantation [31P+,11B+(73Ge+ preamorphized)] amorphized silicon in the temperature range 500–600 °C induced by rapid thermal annealing (RTA), using Rutherford backscattering (RBS) and channeling measurements. Our results show rate enhancements ((approximately-equal-to)3.5–6.5) of the velocities of regrowth in all cases studied with respect to values reported in the literature for furnace-induced epitaxy. The measured SPER activation energies (2.7 and 2.6 eV for 31P+ and 11B+ implantations, respectively) while being comparable to literature reported values, were nevertheless higher than the energy required for the activation of these dopants, (approximately-equal-to)1.55–2.45 eV. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically active interfacial defect sites during SPER.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341959
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing'' [J. Appl. Phys. 71, 5474 (1992)] (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3224-3224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352368
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  • 4
    Electronic Resource
    Electronic Resource
    Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5474-5478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of phosphorus into silicon from a doped spin-on glass source using rapid thermal processing is described. The structural and electrical characteristics of the resulting shallow junctions including atomic and carrier concentration profiles, sheet resistance, as well as the effects on bulk carrier transport properties were studied and compared to those resulting from the use of conventional furnace heating. The results show that sheet resistance as low as 15 Ω/(D'Alembertian) and surface carrier concentration higher than 1 × 1020 cm−3 are obtained in the annealed samples. Furthermore, a gettering effect is observed as the minority-carrier diffusion length measured by the surface photovoltage technique is improved after processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350519
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  • 5
    Electronic Resource
    Electronic Resource
    Gettering of gold by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 873-875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first direct evidence of a gettering effect induced by rapid thermal processing (RTP). Homogeneously gold-doped silicon is studied before and after RTP by deep level transient spectroscopy measurements of the Au acceptor level. After a 1000 °C/10 s cycle, gold is depleted in three regions below the surfaces, indicating a gettering effect. The mechanism for this RTP-induced gettering is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101626
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  • 6
    Electronic Resource
    Electronic Resource
    Dose effects during solid phase epitaxial regrowth of boron-implanted, germanium-amorphized silicon induced by rapid thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of implanted boron concentration on the solid phase epitaxial regrowth (SPER) kinetics during rapid thermal annealing (RTA) of 73Ge+-amorphized 〈100〉 silicon in the temperature range 500–575 °C has been studied using Rutherford backscattering and channeling measurements. Relatively flat 11B+ profiles at 5×1019, 1020, and 3×1020 cm−3 were implanted up to a depth (approximately-equal-to)0.18 μm into different 73Ge+-preamorphized 75-cm-diam wafers. Following a RTA anneal at 800 °C/10 s (in order to recrystallize the amorphized layer and activate the implanted boron), the wafers were reamorphized with 73Ge+ ions (constant concentration (approximately-equal-to)3×1020 cm−3 up to a depth (approximately-equal-to)0.2 μm) and the SPER kinetics studied as indicated above. This procedure ensured that the defect densities in the wafers were the same in spite of their different boron doses. Our results clearly show an activation energy reduction from 2.86 eV at 5×1019 atoms/cm3 to 2.6 eV at 3×1020 cm−3 (in spite of the constant defect concentration in the wafers), with a linear relation between the growth rate and the implanted dose throughout the temperature range of study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99882
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  • 7
    Electronic Resource
    Electronic Resource
    Impact of ultraviolet light during rapid thermal diffusion (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal processing for junction formation is emerging as a low cost technique for solar cell as well as for other semiconductor device production. Compared to conventional furnace processing, process differences are not only in very high heating and cooling rates, but also in the incoherent emitted radiation spectrum, which can act on dopant diffusion. The photons emitted from tungsten halogen lamps go from far ultraviolet, over visible to infrared light. In this work additional mercury ultraviolet lamps are used during rapid thermal annealing to analyze the influence of high energetic photons on diffusion mechanisms. The diffusion results are discussed in terms of radiation spectrum, involving analysis of diffusion profiles and sheet resistances. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121425
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  • 8
    Electronic Resource
    Electronic Resource
    Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1249-1251 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of simultaneous diffusion of phosphorus and aluminum in crystalline silicon on the minority carrier diffusion length as measured by the surface photovoltage technique. The diffusion is carried out by using a tungsten halogen lamp furnace (rapid thermal processing). We have shown that more than 100% bulk diffusion length improvement can be achieved in both float zone and Czochralski silicon material. The different contributions to this enhancement are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109786
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  • 9
    Electronic Resource
    Electronic Resource
    Bulk diffusion length improvement by rapid thermal gettering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3446-3448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal diffusion of phosphorus into p-type silicon from a spin-coated film containing the dopant has been studied as a function of process temperature and time duration. The electron diffusion length measurements performed by the surface photovoltage method present evidence for a gettering phenomena since the diffusion length values of the diffused silicon samples are found to exceed the initial value reported for the virgin material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105673
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  • 10
    Electronic Resource
    Electronic Resource
    Strong improvement of diffusion length by phosphorus and aluminum gettering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 979-981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The minority carrier diffusion length in polycrystalline silicon has been strongly improved by using several gettering processes. These processes include different surface treatments followed by conventional thermal annealing (CTA) performed at temperatures between 800 and 950 °C. The n+p structures with a back lapped surface exhibit a maximum increase of the diffusion length from 35 to 140 μm for 45 min annealing duration at temperatures of 900 and 950 °C. The realization of a back surface field (BSF) on the lapped surface by aluminum deposition followed by a CTA cycle at 950 °C, with slow cooling rate (2 °C/min) induces a strong additional gettering, resulting in the increase of the minority carrier diffusion length up to 350%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108539
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