ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The negative magnetoresistance in δ-doped GaAs is investigated experimentally. It is shown for highly perfect structures that the value of the prefactor in the expression for the negative magnetoresistance significantly exceeds the theoretical value for a two-dimensional film with a single filled size-quantized subband. The role of a large number of filled subbands and intersubband transitions is discussed. It is shown that the symmetry of the wave functions and the scattering potential in δ-doped layers can cause the times of interband transitions between subbands with different parity (τ i,j ) to be greater than the phase-relaxation time of the wave function (τ ϕ ). Such a relation between τ i,j and τ ϕ should be manifested as a significant increase in the prefactor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187618
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