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  • 1
    Electronic Resource
    Electronic Resource
    Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3144-3148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice matched {InP/GaInAs}30/InP[001] superlattice containing an enlarged quantum well (EQW) was investigated by means of grazing incidence x-ray diffraction (GID) using synchrotron radiation. The in-plane (220) rocking curve was measured choosing a grazing angle for the incident beam with respect to the surface, αi. At the angular position of maximum intensity we recorded the intensity distribution of the reflected beam normal to the surface (rod scan) using a position sensitive detector. The rod contains information about the density variation towards the surface normal. Instead of a single superlattice Bragg peak we found a double peak which can be explained by the phase shift of the partial x-ray waves scattered at the two superlattices sandwitching the EQW. For fixed αithe intensity ratio of the two peaks is a measure of the EQW thickness. An additional advantage of the GID technique is that this ratio can be modified by changing the penetration depth of the probing x-ray beam into the sample. This is performed by keeping αi smaller or larger than the critical angle for total external reflection. The EQW thickness and its position below the surface is determined by simulation of the recorded rod scans using the kinematic approach of the GID. Both quantities are obtained with monolayer accuracy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360001
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2978-2980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied triple-crystal grazing incidence diffraction to self-assembled islands on a Ge/Si(001) superlattice. Lateral ordering in the near-surface region is evaluated from reciprocal space mappings around different surface reflections. The observed intensities are explained by the short-range order strain modulation of the lattice parameter in the substrate induced by coherent Ge islands. We find the island-induced strain modulation to be arranged in a local square lattice. A nearest neighbor disorder parameter, the size distribution of the islands, and a correlation length are obtained from the presented model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123985
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  • 3
    Electronic Resource
    Electronic Resource
    Elastic scattering under simultaneous excitation of x-ray standing waves in multilayers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5179-5184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the structure factor of diffuse scattering and amorphous scattering in a W/Si multilayer under simultaneous excitation of x-ray standing waves. The tuning of the nodes and antinodes to the location of the W and Si sublayers or to the respective interfaces increases the selective sensitivity to the structure of the respective sublayer or interface. The dynamically broadened first multilayer Bragg peak is modeled by the Darwin theory of dynamic diffraction, which allows for the exact determination of the standing wave phase. The decay of diffuse intensity, as measured in a grazing incidence geometry at different standing wave phase shifts, indicates that the height–height self-correlation function is of the same form for both types of interfaces, W/Si and Si/W. The amorphous peaks of the Si sublayer can only be observed if the angles of incidence and exit are optimized to suppress the scattering from the otherwise dominating W layers. The peak positions are the same as for bulk amorphous silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367337
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  • 4
    Electronic Resource
    Electronic Resource
    Nonspecular x-ray scattering from the amorphous state in W/C multilayers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 904-906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonspecular x-ray scattering distribution from an amorphous W/C multilayer structure has been examined close to low order Bragg reflections. The scattering distribution is explained as coherent atomic scattering from amorphous W and C layers having a periodicity in growth direction. This layer periodicity results in scattering intensity streaks in reciprocal space perpendicular to the one-dimensional order. In addition, sharp intensity modulations appear, whenever the incident or exit angle equals the first order Bragg angle of the multilayer. They can be understood in terms of a dynamical interaction between the x-ray standing wave and the atomic scattering in the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107723
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  • 5
    Electronic Resource
    Electronic Resource
    Amorphous Ni50Nb50/C multilayers for soft x rays made by pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1547-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ni50Nb50/C multilayers with a repeat period of 2.39 nm, suitable for the water window region of soft x rays, have been prepared by pulsed laser deposition. The interface and in-plane structure of these multilayers was studied by low angle hard x-ray diffraction. It was found that the interfaces are very sharp with a typical lateral correlation length of the order of 180 nm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114488
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray imaging and diffraction from surface phonons on GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface acoustic waves (SAWs) are excited on the GaAs (001) surface by using interdigital transducers, designed for frequencies of up to 900 MHz. The emitted phonons with wavelengths down to 3.5 μm are visualized and characterized by combined x-ray diffraction techniques. Using stroboscopic topography, the SAW emission of a parallel and a focusing transducer geometry are imaged. High-resolution x-ray diffraction profiles show up to 12 phonon-induced satellite reflections besides the GaAs (004) reflection, with a width of 9 arcsec each. The diffraction pattern is simulated numerically, applying the kinematical scattering theory to a model crystal. From fits to measured diffraction profiles at different excitation voltages, the SAW amplitudes were calculated and found to be in the sub-nm range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124797
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous x-ray diffraction on InAs/GaAs quantum dot systems (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 448-450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-standing InAs quantum dots on a GaAs (001) substrate have been investigated using grazing incidence x-ray diffraction. To suppress the strong scattering contribution from the GaAs substrate, we performed anomalous diffraction experiments at the superstructure (200) reflection, showing that the relative intensities from the dots and the substrate undergo a significant change with the x-ray energy below and above the As K edge. Since the signal from the substrate material can essentially be suppressed, this method is ideally suited for the investigation of strain, shape, and interdiffusion of buried quantum dots and quantum dots embedded in heteroepitaxial multilayers. In addition, we show that it can be used as a tool for studying wetting layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491293
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  • 8
    Electronic Resource
    Electronic Resource
    Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2698-2700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the early stages of annealing in boron implanted silicon. In a grazing incidence diffuse scattering investigation of implantation-induced defects, we have observed narrow diffuse rods of intensity along 〈111〉 directions. These diffuse streaks arise from stacking faults formed during annealing in the 1000 °C range. From the width of the diffuse streak the average size of the stacking fault is 71 nm in diameter. These intensity rods are distinct from the point defect or point defect cluster scattering in the tails of the Bragg peak (Huang scattering). From the q dependence of the scattered intensity in the Huang scattering region we find clear evidence for defect clusters with an average effective size of 4 nm, remarkably independent of the annealing temperature. These observations are discussed in the context of the enhanced diffusion of implanted boron over its bulk value referred to as transient enhanced diffusion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126447
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  • 9
    Electronic Resource
    Electronic Resource
    Structure and ordering of GaN quantum dot multilayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1971-1973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray techniques are used to characterize the structure of multilayered GaN quantum dots in an AlN matrix. For a dot lateral size of 170 Å, the values of the interdot vertical and lateral correlation lengths are 1500 and 250 Å, respectively. The presence of smaller quantum dots is observed only in the layers deposited first. The strain distribution in the multilayer is also investigated as a function of depth. Along the dot columns, the crystal lattice remains coherent, with elastic relaxation from the bottom to the top of the multilayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403657
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of β-SiC precipitation in Si1−yCy epilayers by x-ray scattering at grazing incidence (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3409-3411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated molecular-beam-epitaxy-grown, pseudomorphic Si1−yCy epilayers (y≤0.015) on Si(001) after ex situ annealing by x-ray scattering at grazing incidence. The diffuse intensity around the Si (220) surface reflection consists of Huang scattering due to the long-range displacement field of substitutional carbon atoms and of the form-factor-induced small angle scattering of holes created by β-SiC precipitates in the Si matrix. Even in the as-grown samples, where other methods gave no indication of β-SiC precipitates, grazing incidence diffraction clearly showed their presence. The precipitates with a mean size of 5 Å are stable against annealing up to at least 600 °C; at 800 °C carbon leaves substitutional sites and the number of precipitates increases, whereas at 1000 °C a significant increase of the precipitate size (up to (approximate)15 Å) is detected as well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126662
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