Publication Date:
2015-01-31
Description:
The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide ( a -InO x ) thin film transistors (TFTs) is reported. In a -InO x TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a -InO x matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a -InO x TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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