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  • 1
    Monograph available for loan
    Monograph available for loan
    Average configuration of the quiet auroral oval (1986)
    København : Danske Meteorologiske Inst.
    Details Availability
    Call number: MOP 46830 / Mitte
    Type of Medium: Monograph available for loan
    Pages: 29 S.
    Series Statement: Geophysical Papers / Danske Meteorologiske Institut R - 73
    Location: MOP - must be ordered
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Uniaxial stress effects on the AlAs/GaAs double-barrier heterostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8241-8246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the current-voltage characteristics of GaAs-AlAs-GaAs-AlAs-GaAs double-barrier heterostructures grown by molecular beam epitaxy on (100) oriented substrates under longitudinal uniaxial stress along 〈100〉 (parallel to current) direction and transverse uniaxial stress along 〈011〉 (perpendicular to current) direction at 77 K. For longitudinal stress measurement, the peak-to-valley current ratio due to Γ conduction electrons and the peak voltage (the voltage where the current peaks) decrease essentially with longitudinal stress and the negative differential resistance (NDR) disappears at a stress that depends on the dopings and dimensions of the heterostructures. However, it is surprisingly recovered at very high stress and the peak voltage reappears at a lower voltage, which is quite in contrast with the previous report for hydrostatic pressure studies. The observed shifts of the peak voltage, the decrease of the peak current, and hence the disappearance of the NDR are consistent with pressure-induced increase of the effective mass. The recovery of Γ-NDR is explained by the more rapid reduction of Xl (momentum conserving longitudinal X valleys) nonresonant current due to the increase of reflections at GaAs/AlAs interfaces under very high uniaxial stress, where there are potential wells rather than barriers for Xl current. A distinct NDR near- zero bias (∼40 mV) appears when the externally applied uniaxial stress is high enough. This has been attributed by Mendez and Chang [Surf. Sci. 229, 173 (1990)] to the resonant tunneling between two-dimensional electron gases. Our experiment shows that this tunneling is via momentum conserving longitudinal X-valleys (Xl). For transverse stress measurement, there is no evidence of this feature up to 7 kbar.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347430
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  • 3
    Electronic Resource
    Electronic Resource
    Uniaxial stress dependence of the current-voltage characteristics of n-type AlAs/GaAs/AlAs tunnel diodes at 77 K (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 525-527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Longitudinal uniaxial stress along 〈100〉 has been applied in AlAs-GaAs-AlAs resonant tunneling heterostructures grown on (100) substrates to study the current-voltage characteristics as a function of stress. We find that the nonresonant current is due to Fowler–Nordheim tunneling currents by both longitudinal and transverse X valleys (X1 and Xt). This current decreases with low stress (〈1 kbar), increases with intermediate stress and decreases with high stress (〉9 kbar) again. This is due to the increase of the Xt barrier at low stress, the decrease of the X1 barrier at intermediate stress, and the formation and the increase of X1 potential well depth at high stress. We also find a large unexplained monotonic decrease of the resonant current through the Γ valley.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347699
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  • 4
    Electronic Resource
    Electronic Resource
    On the mechanism and frequency limit of double-barrier quantum-well structures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2082-2084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two parameters are adopted to characterize the transport process in double-barrier quantum-well (DBQW) structures. It is shown that, in general, both coherent resonant tunneling and incoherent sequential tunneling processes are possible. However, for most high-frequency applications, large current densities (〉104 A/cm2) are required and, therefore, the sequential process is unlikely to occur. To determine the high-frequency capability, both the adiabatic limit of the dc current-voltage curve as well as the capacitance charging time in an embedding circuit need to be considered. We confirm that the DBQW structures with barrier thickness of 20 A(ring) or smaller can operate up to about 1 THz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338012
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  • 5
    Electronic Resource
    Electronic Resource
    Multiple charging in electrospray ionization of poly(ethylene glycols) (1988)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 546-550 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100313a058
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetic mechanism of the cytosolic malic enzyme from human breast cancer cell line
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 296 (1992), S. 468-473 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(92)90599-R
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  • 7
    Electronic Resource
    Electronic Resource
    Background correction of the SAXS intensities scattered by semicrystalline materials (1992)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 25 (1992), S. 646-647 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new method of background correction of small-angle X-ray scattering (SAXS) intensities scattered by semicrystalline materials is proposed. The intensities scattered by the sample when in the amorphous state were taken as the background scattering. This method was applied to background correction of the SAXS intensities scattered by aged nylon 1010 and the width of the transition layer between crystalline and amorphous phase was determined to be 2.0 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889892004813
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  • 8
    Electronic Resource
    Electronic Resource
    Background correction of the SAXS intensities scattered by aged metallic glass (1994)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 27 (1994), S. 419-421 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The background correction method proposed by the author [Meng (1992). J. Appl. Cryst. 25, 646–647] has been applied to small-angle scattering data from aged Cu73Sn6Ni8P15 metallic glass. The scattering intensities observed from an as-quenched sample were used for the background correction of the intensities observed from an aged sample, after correction for the volume fraction of the crystalline phase that occurred in the aged glass. The corrected intensities satisfied Porod's law.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S002188989301369X
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  • 9
    Electronic Resource
    Electronic Resource
    Small-Angle X-ray Scattering Study of the Interfacial Characteristics Between δ' Phase and Matrix in Al–2.70 mass% Li Alloy (1998)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 31 (1998), S. 7-9 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Small-angle X-ray scattering (SAXS) has been used to study the δ′ precipitation in an Al-2.70 mass% Li alloy aged at 463 K for 8 and 30 h. It is shown that the SAXS profile does not agree with Porod's law and has a negative slope. This suggests that the dispersive interfacial layer exists between the δ′ phase and the matrix. It is positive evidence that spinodal decomposition takes place during the precipitation process of the δ′ phase. The thicknesses of the interfacial layers are found to be 4.75 and 6.63 nm for the samples aged at 463 K for 8 and 30 h, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889897006213
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  • 10
    Electronic Resource
    Electronic Resource
    Auroral boundary variations and the interplanetary magnetic field
    Amsterdam : Elsevier
    Planetary and Space Science 32 (1984), S. 25-29 
    Details
    ISSN: 0032-0633
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0032-0633(84)90038-2
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