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  • 1
    Monograph available for loan
    Monograph available for loan
    Cambridge ; New York : Cambridge University Press
    Call number: AWI G6-98-0145
    Type of Medium: Monograph available for loan
    Pages: XIV, 376 S. : Abb. ; 23 cm
    ISBN: 0521368111
    Series Statement: Cambridge Solid State Science Series
    Branch Library: AWI Library
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6511-6520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data from measurements of optical absorption, photoconductivity, dark conductivity, thermally stimulated conductivity (TSC), and thermoluminescence (TL) on samples of undoped and Ga-doped, Czochralski-grown Bi12GeO20 single crystals are reported. The photoconductivity is n type, and the dark conductivity is p type. Undoped BGO exhibits a broad, band-edge absorption due to the optical excitation of electrons to the conduction band which gives the samples a yellow coloration. This absorption is reduced by the addition of Ga which acts as a compensating acceptor. When illuminated with light into this absorption band, but with photons of energy less than the band gap, photoexcitation of electrons occurs. These become trapped, inducing additional absorption and photoconductivity bands and TSC signals, but not TL. Excitation with photons of energy greater than the band gap induces both TSC and TL. Examination of the TSC and TL signals as a function of excitation wavelength allows the distinction between electron and hole trapping states for which trapping parameters have been determined. In addition, dark conductivity reveals three major hole states at energies of ∼Ev+1.41, ∼Ev+0.86, and ∼Ev+0.54 eV. These are believed to be empty donor states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6521-6533 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of thermally stimulated conductivity (TSC) measurements performed on "pure'' Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show many overlapping TSC peaks in the temperature range of interest (80–300 K) which arise from a complex array of trapping states. The TSC signals from both pure BGO and Ga-doped BGO are similar, consisting of a series of large peaks below 160 K and many smaller overlapping peaks between 180 and 300 K. The analysis shows that the large peaks below 160 K in undoped BGO arise from two trapping centers, each characterized by a distribution of activation energies centered at ∼0.24 and ∼0.29 eV, with distribution widths of ∼0.065 eV. In the Ga-doped BGO sample the large peak seen below 180 K arises from a single trapping center at ∼0.29 eV with a distribution width of ∼0.085 eV. Activation energies, frequency factors, and concentrations of trapping states have been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1124-1130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report detailed optical absorption spectra for Mn2+ in CaF2. The spectra from unirradiated samples, reported here for the first time, enable the 495-nm luminescence emission to be clearly assigned to a transition from the first excited 4T1g (4G) level to the 6A1g (6S) ground state. On the basis of the absorption curves energy level assignments are made for all of the 4G, 4D, 4P, and 4F levels. Racah parameters are evaluated and the reduction of these from their free-ion values, due to covalency effects, is estimated. A value of Dq=420 cm−1 is calculated and an Orgel diagram for this system is constructed. Finally, oscillator strengths for each of the transitions are estimated from the absorption spectra. The optical absorption spectra from gamma irradiated samples show a complex array of overlapping bands, most of which can be shown to be related to the presence of Mn. The thermal annealing of the bands is associated with the production of thermoluminescence at an emission wavelength of 495 nm. Although no definite models can be offered for the defects involved in these processes, they are believed to be complexes of Mn and radiation-induced defects (e.g., Mn/F centers).
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3364-3373 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using time-resolved photoluminescence spectroscopy we have measured the lifetime of the F-center luminescence from α-Al2O3:C. The measurements reveal a lifetime of 35–36 ms at room temperature, decreasing to 〈2 ms over the temperature range from 370 to 500 K. The decrease in the lifetime is shown to follow a classical Mott-Seitz dependence for thermal quenching of luminescence, with an activation energy W of ∼1.08±0.03 eV and a corresponding frequency factor ν of ∼1014 s−1. Similar values for the energy and frequency factor were also obtained from an analysis of thermoluminescence (TL) glow curves measured at different heating rates, when the TL is measured over a wavelength range corresponding to the F-center luminescence emission (centered at 420 nm). Furthermore, the parameters obtained were independent of the glow curve shape, the degree of trap filling, or the specific conditions under which the crystals were grown. This is interpreted as a demonstration that the well-known heating rate dependence of the TL from this material is a result of thermal quenching of the F-center emission. Whereas the thermal quenching parameters obtained from measurement of the luminescence lifetime and from the heating rate analysis of the TL glow curves are independent of the sample type, the degree of trap filling, and the heating or cooling rate, measurements of the photoluminescence intensity, induced by absorption of F-band light, were found to be dependent upon all of the above conditions. This difference in behavior is attributed to a phosphorescence signal from traps associated with the ∼265, ∼310, and ∼450 K TL peaks. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 249-256 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical threshold energies for photoionization of several different electron traps in Al2O3 have been determined using photoconductivity and optically stimulated luminescence (OSL). Stimulation of the photoconductivity and OSL is observed over a wide range of optical energies. The localized trapping states giving rise to the signals are found to be distributed in energy over a wide energy range, with major distributions between 1.7 and 2.5, 3.0 and 3.8, and 3.8 and 4.9 eV. From annealing measurements we show that the lowest energy distribution (1.7–2.5 eV) correlates with the thermoluminescence and thermally stimulated conductivity signals appearing in the temperature range of 400–500 K. The annealing measurements show that these traps contribute 〉90% of the OSL signal. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2505-2510 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we study CaF2:Ce,Mn and use optical absorption, photoluminescence (excitation and emission), and x-ray-induced luminescence to characterize the role played by Ce in various lattice sites during these processes. The data indicate that energy transfer takes place from Ce to Mn, predominantly from Ce3+ in tetragonal sites (i.e., Ce3+-F−int centers with C4v symmetry). There is also some evidence of transfer from higher-order clusters of these defects. In contrast, however, we note that there is no evidence of energy transfer in x-ray-excited luminescence; an increase in the Ce concentration causes a decrease in the Mn2+ emission. It appears from the present investigations that, during x-ray excitation, nonlocally compensated Ce3+ ions of cubic symmetry compete with Mn2+ ions for free electrons released during irradiation. Thus, the data indicate that tetragonal Ce3+ sites are dominant during UV excitation and give rise to energy transfer to Mn2+, whereas cubic Ce3+ sites are dominant during irradiation with high-energy ionizing radiations and no energy transfer takes place.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6073-6083 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique is introduced which involves linearly modulating the power of the stimulation light while measuring the photoconductivity in Al2O3:C. This produces peaks in the measured photoconductivity instead of the typical exponential decay seen when using a constant power stimulation light. The technique, called linearly modulated photoconductivity (LM-PC), is the conductivity equivalent of linearly modulated optically stimulated luminescence (LM-OSL). Two peaks are seen in the LM-PC measurements that correspond to the same charge residing in the 450 and 600 K thermally stimulated conductivity peaks, respectively. Simultaneous measurements on both the LM-PC and LM-OSL reveal that the second peak in the LM-PC is not present in the LM-OSL. Deconvolutions are performed on the LM-OSL to determine the underlying components that make up the detected OSL emissions. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2931-2936 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallographic and optical characterization techniques were carried out on ZnSe single-crystal samples grown by the seeded physical vapor transport (SPVT) and by high-pressure Bridgman techniques. A comparison of etch pit densities shows much lower values for the SPVT material. The distribution of etch pits across a wafer is uniform in SPVT samples but extremely nonuniform in the Bridgman samples. X-ray topography studies reveal that the SPVT material has few defects and no grain boundaries while the Bridgman material shows both low and high angle grain boundaries. Photoluminescence (PL) data at 12 K on the SPVT material reveal an absence of donor acceptor pair (DAP) emissions. The spectrum is dominated by the Id1 Cu-related line and its phonon replicas and only weak Cug and Cur emissions are observed. No thermoluminescence (TL) is seen from the SPVT samples but they do give thermally stimulated conductivity (TSC) signals due to the release of holes from CuZn centers with activation energies of 0.33 eV and 0.71 eV. Only hole states are seen in the SPVT material. In contrast the Bridgman samples show intense DAP PL lines, as well as Id1 lines. They show Cug and Cur emission, give strong TL and TSC signals, and reveal an array of both electron and hole states.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 249-258 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature dependence of the electron mobility between ∼200 and 300 K in undoped and 0.3% Fe-doped Bi12GeO20 (BGO) and undoped Bi12SiO20 (BSO) using a time-of-flight technique. We found that mobilities calculated from the observed transit times were independent of sample thickness and applied voltage, but depended approximately exponentially on temperature. The hole current transients were very weak and featureless, and consequently we were unable to measure mobilities for holes. The measured drift mobilities varied from 6.1×10−4 to 0.10 cm2/Vs for undoped BGO, 6.1×10−4 to 0.0170 cm2/Vs for 0.3% Fe-doped BGO, and ∼5×10−4 to 0.014 cm2/Vs for undoped BSO. Values of the microscopic mobility were estimated to be 5.9, 2.3, and 1.4 cm2/Vs for undoped, 0.3% Fe-doped BGO, and undoped BSO, respectively. From the temperature dependence of the electron mobility we obtained an activation energy for the dominant trap of Et=0.31 eV for undoped BGO, Et=0.34 eV for 0.3% Fe-doped BGO, and Et=0.31 eV in the undoped BSO sample. These values are interpreted as the trap depth of the main traps dominating the mobility and agree well with values obtained from the analysis of thermally stimulated conductivity measurements performed previously. © 1997 American Institute of Physics.
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