ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous SiNx:H films were prepared by rf glow discharge of SiH4-NH3 mixtures at 300 °C, and the SiH, NH, and SiN vibrational absorptions were investigated as a function of x. The stretching absorption profiles due to SiH and SiN bonds are reproduced by a superposition of two components at around 2000 and 2100 cm−1, and of three components at around 750, 840, and 960 cm−1, respectively. The dependence of these intensities on x was examined by means of a generation probability analysis on the basis of the random bonding model including SiH and NH bonds which play an important role in the film growth mechanism.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104160
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