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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 2382-2387 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 73 (1969), S. 3474-3477 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 750-754 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4378-4383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Harris functional approach is used to investigate the electron-phonon interaction in silicon, within the rigid ion approximation. The necessary lattice dynamics are solved via the valence shell model. The electron-phonon matrix elements for transitions between selected electronic states are calculated, and equivalent deformation potentials are presented and compared with results of other models. The resulting deformation potentials exhibit significant dispersion throughout much of the Brillouin zone, though remain nearly constant for intervalley transitions between states close to the conduction band minima. The overall value of the deformation potentials is somewhat higher than found in previous models and thus in better agreement with experiment.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 2 (1992), S. 427-446 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear particle dynamics is studied both in current sheets and near neutral lines. The parameter governing particle chaos in a current sheet with a constant normal component, Bn, is κ=(Rmin/ρmax)1/2, where Rmin is the minimum field line radius of curvature and ρmax is the maximum gyroradius. In such a current sheet, motion can be viewed as a combination of a component normal to the current sheet and a tangential component. The parameter κ represents the ratio of the characteristic time scale of the normal component to the tangential, and thus, particle chaos is maximized for κ∼1. For κ(very-much-less-than)1, the slow motion preserves the action integral of the fast motion, Jz, except near the separatrix, the phase space boundary separating motion that crosses the current sheet midplane from that which does not. Near a linear neutral line, it is found that the parameter bn, which is the ratio of the characteristic vertical and horizontal field strengths, rather than κ governs particle chaos. In the limit bn(very-much-less-than)1, the slow motion again preserves Jz, and Jz has the same analytic form as in a constant Bn current sheet. In the limit of bn(very-much-less-than)1, the structure of x-px phase space is controlled by the stable and unstable manifolds associated with the unstable fixed point orbit at (x,px)=(0,0), and this structure lies along a contour of constant Jz.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). As reported in Edwards et al. [Appl. Phys. Lett. 72, 698 (1998)], scanning capacitance spectroscopy (SCS) is a new data-taking method employing an SCM. SCS produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width. In this article, we report a series of microelectronics applications of SCS in which we image submicron transistors, Si bipolar transistors, and shallow-trench isolation structures. We describe two failure-analysis applications involving submicron transistors and shallow-trench isolation. We show a process-development application in which SCS provides microscopic evidence of the physical origins of the narrow-emitter effect in Si bipolar transistors. We image the depletion width in a Si bipolar transistor to explain an electric field-induced hot-carrier reliability failure. We show two sample geometries that can be used to examine different device properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An ultrasonic guided wave scan system was used to non-destructively monitor damage over time and position in a C/enhanced SiC sample that was creep tested to failure at 1200°C in air at a stress of 69 MPa (10 ksi). The use of the guided wave scan system for mapping evolving oxidation profiles (via porosity gradients resulting from oxidation) along the sample length and predicting failure location was explored. The creep-rupture tests were interrupted for ultrasonic evaluation every two hours until failure at ∼17.5 cumulative hours.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 698-700 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning capacitance spectroscopy (SCS), a variant of scanning capacitance microscopy (SCM), is presented. By cycling the applied dc bias voltage between the tip and sample on successive scan lines, several points of the high-frequency capacitance–voltage characteristic C(V) of the metal–oxide–semiconductor capacitor formed by the tip and oxidized Si surface are sampled throughout an entire image. By numerically integrating dC/dV, spatially resolved C(V) curves are obtained. Physical interpretation of the C(V) curves is simpler than for a dC/dV image as in a single-voltage SCM image, so that the pn junction may be unambiguously localized inside a narrow and well-defined region. We show SCS data of a transistor in which the pn junction is delineated with a spatial resolution of ±30 nm. This observation is consistent with the conclusion that SCS can delineate the pn junction to a precision comparable to the Si depletion width, in other words, the actual size of the electrical pn junction. A physical model to explain the observed SCS data near the pn junction is presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1530-1532 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-cost multichannel scaler and signal-averaging system with user selectable channel widths ranging from 1 to 255 μs has been developed for molecular beam time-of-flight (TOF) experiments. It has the ability to collect up to 255 channels and has a programmable delay of up to 0.65 s. On-board logic can accommodate a 15-MHz count rate. Completely contained on a 7×2 3/4 -in. Apple II prototyping board (with the exception of a 5-A, 5-V external power supply), the interface fits into a peripheral port of the Apple II. The interface was tested by measuring the TOF distribution of Ar metastables from a supersonic nozzle beam source.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2279-2284 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Three moisture sensors were tested as a means for determining the surface wetness on carbonate building stones exposed to conditions that produce deposition of moisture. A relative-humidity probe, a gypsum-coated circuit grid, and a limestone-block resistor were tested as sensors for determining surface wetness. Sensors were tested under laboratory conditions of constant relative humidity and temperature and also under on-site conditions of variable relative humidity and temperature for eight weeks at Newcomb, NY. Laboratory tests indicated that relative humidity alone did not cause sensors to become saturated with water. However, the rates of drying indicated by the sensors after an initial saturation were inversely related to the relative humidity. On-site testing of the relative-humidity probe and the gypsum-coated ciruit grid indicated that they respond to a diurnal wetting and drying cycle; the limestone-block resistor responded only to rainfall.
    Type of Medium: Electronic Resource
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