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  • 1
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy and micro-Raman analysis of conductive RuO2 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2987-2992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ruthenium oxide (RuO2) was synthesized in thin film and powder forms using the solution chemistry technique. The oxide electrodes on Si substrates were characterized in terms of their structure, composition, stoichiometry, and conductivity. X-ray lattice parameter calculations and micro-Raman analysis revealed the rutile structure in the material. Both films and powders exhibited an unassigned Raman band at about 477 cm−1 in their Raman spectra. Performing peak frequency calculations for B2g and A1g modes of RuO2 using the rigid-ion model, which ruled out the possibility that this band originated from disorder induced symmetry, allowed silent mode. Based on the x-ray photoelectron spectroscopy (XPS) and temperature dependent Raman studies, this band was assigned to hydrated RuO2. XPS characterizations of our samples revealed minute surface contamination of oxygen and chlorine, probably due to the film preparation and high temperature deposition processes. Films with uniform microstructure, low surface roughness, and good electrical properties meet the requirements for serving as the bottom electrode for the ferroelectric capacitor. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337588
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  • 2
    Electronic Resource
    Electronic Resource
    Micro-Raman investigation of stress variations in lead titanate films on sapphire (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 828-834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the sol–gel method, PbTiO3 films of 21, 64, 128, 210, 310, and 420 nm thicknesses were obtained on (0001) sapphire. Raman scattering and x-ray diffraction techniques were used to study the correlation between the film thickness and the structural changes on these films. The Raman and x-ray intensities in 21 nm film were too weak to reveal any structural information, while all other films showed tetragonal structure. At room temperature, the variation of lowest E(1TO) phonon mode frequency with film thickness was observed due to compressive stresses in the films. The lattice parameters and the degree of a axis orientation values of tetragonal PbTiO3 have been evaluated as a function of film thickness. The changes in lattice parameters thus obtained were used to estimate the stress at each thickness. An excellent agreement was found between the stress values obtained using Raman and x-ray results. An exponential decrease in stress with increasing film thickness was observed because of the structural changes in the lattice. Accordingly, a downshift in the tetragonal–cubic transition temperature with decreasing film thickness has been interpreted using the conventional Landau–Devonshire approach. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370810
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  • 3
    Electronic Resource
    Electronic Resource
    Raman spectroscopy and x-ray diffraction of PbTiO3 thin film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1920-1925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A PbTiO3 thin film prepared on silicon substrate by sol-gel technique has been studied by micro-Raman spectroscopy and x-ray diffraction (XRD). The spectra, in comparison to the single crystal work, show high background in the low frequency region and Raman lines are broader, thus revealing the polycrystalline nature of the film. The frequencies of the Raman bands in the film are clearly shifted to lower frequencies compared to the corresponding ones in the single crystal or powder forms. This phenomenon is similar to the hydrostatic pressure effect on the Raman lines of PbTiO3 single crystal. The film, therefore, has grains under stress. This stress is caused by nonequilibrium defects and diffusion at the interface. Measurements at different film positions showed variations in the frequency and width of the Raman bands which are associated with the stress and grain size inhomogeneities. The measured shift in the Raman frequencies suggests grain sizes ≤1 μm. XRD indicates grain size of around 22 nm and an average stress around 1.3 GPa, which was determined using the measured shift for the c-lattice constant. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360229
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2975-2984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of the studies on the effect of rare earth Nd doping on the phase formation behavior and electrical properties of sol-gel derived Pb1.05(Zr0.53Ti0.47)O3 (PZT) thin films are presented. The perovskite phase is obtained up to 5 at. % doping and beyond that pyrochlore phase was found to coexist with the perovskite phase in all the films. The transition temperature of undoped lead zirconate titanate (PZT) film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor-type behavior and a diffuse phase transition, similar to that observed in relaxor materials. The introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO3 lattice, which causes the observed dielectric relaxation. Efforts were made to isolate the irreversible component contributions in low field dielectric and high field polarization switching behavior. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391416
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  • 5
    Electronic Resource
    Electronic Resource
    Sol–gel derived grain oriented barium strontium titanate thin films for phase shifter applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 896-903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work process methodology was optimized to synthesize oriented barium strontium titanate (BST) (50/50) and (60/40) thin films on strontium titanate (100) and lanthanum aluminate (LAO) (100) substrates by using the chemical solution deposition technique. These films were characterized in terms of their phase formation behavior and structural growth characteristics using x-ray diffraction and atomic force microscopy. A tentative mechanism of the epitaxial growth has been proposed. Films were also characterized in terms of their dielectric properties. The high tunability and low dielectric loss of these films make them attractive for fabricating tunable dielectric devices. Accordingly, we have fabricated eight element coupled microstrip phase shifters and tested them in terms of their degree of phase shift and insertion loss characteristics. An insertion loss of 8.435 dB, phase shift in the order of 320° (2.6–14.5 V/μm) and κ factor (phase shift/dB of loss) of about 38.0°/dB was achieved in BST (60/40) films deposited on LAO (100) substrate which is comparable to the films grown by other film deposition techniques reported in the literature. The microstructure of the sol–gel derived films show surface porosity which may be responsible for the low dielectric strength of these films. Presently, we are studying the sintering mechanism and kinetics of these films in order to improve the density which is believed to further improve the phase shift and lower insertion loss to result in an improved tunability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378811
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and electrical characteristics of Pb0.90La0.15TiO3 thin films on different bottom electrodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5637-5643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb0.90La0.15TiO3 (PLT15) thin films were deposited by the sol-gel method on Pt, Pt/Si, and RuO2 on Si and Pt/Si bottom electrodes. X-ray diffraction, micro-Raman spectroscopy, and atomic force microscopy techniques were used for structural characterization of these films. PLT15 films on different electrodes showed good surface morphology with dense and uniform microstructure. PLT15 films on solution derived RuO2 bottom electrodes show (100) preferred orientation of growth and result in larger crystallites. Films deposited on a Pt bottom electrode show sharp and intense Raman features indicating better crystallinity and insignificant film–electrode interactions. PLT15 film on a Pt bottom electrode exhibited higher dielectric constant (1300 at 100 kHz) and high values of Pm and Pr, 68 and 46 μC/cm2, respectively, compared to other electrodes. Films on a RuO2 bottom electrode showed relatively inferior dielectric and ferroelectric properties. The ac field dependence of dielectric permittivity at subswitching fields was fitted using the Rayleigh law. It was found that ∼22% of the total measured permittivity was due to irreversible domain wall displacement for the films on a Pt electrode. The reversible polarization components estimated from the capacitance–voltage (C–V) and quasistatic hysteresis measurements showed that Prev/Psat at Vmax for the case of Pt/Si (24%), was larger than that of Pt (11%) bottom electrodes. The observed results were correlated with the domain wall pinning at the disturbed film–electrode interface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365062
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  • 7
    Electronic Resource
    Electronic Resource
    Fatigue resistance in lead zirconate titanate thin ferroelectric films: Effect of cerium doping and frequency dependence (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 138-140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate improvement in fatigue resistance and other ferroelectric properties through cerium doping in sol–gel derived lead zirconate titanate thin films. We have studied frequency dependence of fatigue behavior and show that the loss of polarization due to fatigue follows a universal scaling behavior with N/f2, where N is the number of switching cycles and f the frequency. The origin of the scaling is attributed to the drift of oxygen vacancies, which is the rate limiting process in the growth of the interface layer responsible for fatigue. Empirical fits for both undoped and cerium-doped samples show that switchable polarization follows stretched exponential decay with time or N/f. Cerium doping is shown to improve fatigue resistance by impeding the motion of oxygen vacancies. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119287
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of acceptor and donor dopants on polarization components of lead zirconate titanate thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 239-241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have compared the magnitudes of reversible and irreversible polarization components of sol–gel-derived Nd3+- and Fe3+-doped PZT (53/47) thin films on platinized silicon substrates. Beyond the switching field, it was found that the reversible component of the polarization remains almost constant both for donor- (Nd3+) and acceptor- (Fe3+) doped PZT films. The irreversible polarization component reduces with the increase in Nd3+ content, whereas it increases until 3 at. % Fe3+-doped PZT thin films. The dielectric behavior of these films at subswitching fields was analyzed in terms of Rayleigh law. The inverse of the Raleigh coefficient (υ) was considered as a measure of the obstacle for the domain-wall motion. In the case of Fe-doped PZT, the inverse of the Raleigh coefficient (υ) shows a declining linearity with Fe content, which may be found exactly opposite to that observed for Nd-doped PZT. The observed results are explained in terms of the nature of the defect-domain-wall interaction of acceptor-and-donor-doped PZT thin films. Studies indicated that in the case of Fe-doped PZT films, the possible defect interaction initiates only above 2 at. % and it was found to be much lower in magnitude in comparison with the Nd doping. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383057
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  • 9
    Electronic Resource
    Electronic Resource
    AMINO ACID COMPOSITION OF SOME INDIAN VEGETABLES AS DETERMINED BY PAPER CHROMATOGRAPHY (1956)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 21 (1956), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1956.tb16945.x
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  • 10
    Electronic Resource
    Electronic Resource
    Structural Heterogeneity and Coordination Chemistry of Nickel(II) Octaethyl-meso-nitroporphyrins (1994)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 116 (1994), S. 3261-3270 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00087a011
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