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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4551-4554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical calculations show that inhomogeneous doping can increase the efficiency of thermoelectric generators and refrigerators.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7326-7332 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Equations are solved to give the variations in temperature, density, and potential, when a solid has electrical currents, heat currents, and particle diffusion. Solutions are presented in one dimension for currents down a bar. These solutions are used to calculate the efficiency of a thermoelectric refrigerator, which is optimized to give the coefficient of performance (COP). The COP depends upon the temperature difference ΔT, but does not depend upon the density difference Δn between the two ends of the bar. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4415-4422 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fast current pulse causes a material to heat and undergo rapid expansion. We calculate the response of a cylindrically shaped material to a pulse on the microsecond time scale. The first step is to obtain the breathing modes of elastic oscillation of the cylinder. These modes are calculated using a Rayleigh–Ritz variational method introduced by Demarest for cubes. The boundary conditions are derived, which give the amplitude of each elastic mode in response to the sudden heating. The results are illustrated by calculations on a station arrester made of a ZnO ceramic. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6516-6522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport in zinc oxide varistors is simulated using two-dimensional Voronoi networks. The networks are assumed to contain randomly distributed grain boundaries of three electrical types: (1) high nonlinearity (i.e., "good'') junctions; (2) poor nonlinearity (i.e., "bad'') junctions; and (3) linear with low-resistivity (i.e., ohmic) junctions. These type classifications are those found in experimental measurements. By varying the type concentrations, the simulated current density versus electric field (J–E) characteristics can be made to conform to the different experimentally observed characteristics of ZnO varistors. These characteristics include the sharpness of switching at the transition between ohmic and nonlinear J–E response (i.e., knee region), as well as the degree of nonlinearity. It is shown that the reduction of the nonlinearity coefficient of bulk varistors, relative to that of isolated grain boundaries, can be explained only by the presence of "bad'' varistor junctions. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4362-4366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A refrigerator is described that is based upon thermionic emission. Room-temperature refrigeration is efficient when the work function of the anode is about 0.3–0.4 eV but those low values are unattainable. The refrigerator only operates at higher temperatures.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2752-2754 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theory of tunable infrared response in field-effect transistors. The linear α(ω) and second-order β(ω) polarizability are calculated numerically as functions of frequency of an applied electric field. Transitions between electron subbands in the inversion layer cause resonances in the frequency response, which are tunable with a gate voltage. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8629-8633 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal and mechanical behavior of high power ZnO surge arresters under current pulses of various magnitude and duration is simulated. By solving heat transfer equations for a varistor disk with nonuniform electrical properties, we compute the time dependence of the temperature profile and the distribution of thermal stresses. The simulations identify failure processes and determine energy handling capability of varistor elements as a function of the applied current. The results are in good agreement with the experimental data and explain the energy handling dependence upon the surge intensity and duration. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 273-281 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A realistic model of transport properties of zinc oxide varistors is constructed from two-dimensional Voronoi networks and studied via computer simulations. In agreement with experimental microcontact measurements made on individual junctions, the networks are assumed to contain randomly distributed microjunctions of two types: (1) electrically active with highly nonlinear current-voltage (I-V) characteristics and (2) ohmic, i.e., with linear I-V characteristics. Effects of the ohmic grain boundaries in the network are simulated for various concentrations and resistivities. Shapes of the simulated I-V characteristics and current dependence of the coefficient of nonlinearity of the network are in good agreement with those experimentally observed for thin varistor samples and in the measurements employing various surface electrode patterns. It is found that the breakdown voltage of the networks increases with the number of the ohmic grain boundaries, except when their resistivity is so low that it becomes comparable with that of the ZnO grains. The maximal value of the coefficient of nonlinearity of the network is shown to be insensitive to the presence of the ohmic grain boundaries, regardless of their resistivity and concentration. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2249-2254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity, Hall coefficient, and thermopower of Hg1−xCdxTe (MCT) are calculated for 0〈x〈0.3 at temperatures below 400 K and donor doping lower than 1019 cm−3. The results are obtained by solving the Boltzmann equation with the iteration method, including scattering of the carriers by ionized impurities, optical and acoustic phonons, and alloy potential. The agreement between the calculation and a large amount of compiled experimental data is excellent for bulk samples and thick films grown by molecular-beam epitaxy. Using tabulated data for the thermal conductivity the thermoelectric figure of merit Z is calculated, and in the most favorable conditions of doping and composition ZT is less than 0.33 at T=300 K. The potential for increasing the ZT of MCT is discussed.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1899-1901 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The efficiency of thermoelectric devices are analyzed for a superlattice of semiconductor quantum wells. It is assumed that the quantum wells are the thermoelectric active elements, and the layers between conduct only heat. It is shown that the efficiency of the device depends on the property of both layers.
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