Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 1708-1714
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300 °C and 400 °C, producing In-terminated InSb(111)-A surfaces on CaF2/Si(111) substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm2/V s for an 8-μm-thick InSb layer grown on CaF2/Si(111). On CaF2/Si(001) substrates, the InSb layers grew in the (111) orientation with two domains 90° apart. These InSb layers and ones grown on BaF2/CaF2/Si(111) substrates exhibited inferior electrical and structural properties compared to structures grown on CaF2/Si(111) substrates. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.364028
Permalink
|
Location |
Call Number |
Expected |
Availability |