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  • 1
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    PANGAEA
    In:  Supplement to: Lu, P; Li, Z J; Zhang, Zhongshi; Dong, X L (2008): Aerial observations of floe size distribution in the marginal ice zone of summer Prydz Bay. Journal of Geophysical Research, 113(C2), C02011, https://doi.org/10.1029/2006JC003965
    Publication Date: 2023-12-13
    Description: On the basis of aerial photographs of sea ice floes in the marginal ice zone (MIZ) of Prydz Bay acquired from December 2004 to February 2005 during the 21st Chinese National Antarctic Research Expedition, image processing techniques are employed to extract some geometric parameters of floes from two merged transects covering the whole MIZ. Variations of these parameters with the distance into the MIZ are then obtained. Different parameters of floe size, namely area, perimeter, and mean caliper diameter (MCD), follow three similar stages of increasing, flat and increasing again, with distance from the open ocean. Floe shape parameters (roundness and the ratio of perimeter to MCD), however, have less significant variations than that of floe size. Then, to modify the deviation of the cumulative floe size distribution from the ideal power law, an upper truncated power-law function and a Weibull function are used, and four calculated parameters of the above functions are found to be important descriptors of the evolution of floe size distribution in the MIZ. Among them, Lr of the upper truncated power-law function indicates the upper limit of floe size and roughly equals the maximum floe size in each square sample area. L0 in the Weibull distribution shows an increasing proportion of larger floes in squares farther from the open ocean and roughly equals the mean floe size. D in the upper truncated power-law function is closely associated with the degree of confinement during ice breakup. Its decrease with the distance into MIZ indicates the weakening of confinement conditions on floes owing to wave attenuation. The gamma of the Weibull distribution characterizes the degree of homogeneity in a data set. It also decreases with distance into MIZ, implying that floe size distributes increase in range. Finally, a statistical test on floe size is performed to divide the whole MIZ into three distinct zones made up of floes of quite different characteristics. This zonal structure of floe size also agrees well with the trends of floe shape and floe size distribution, and is believed to be a straightforward result of wave-ice interaction in the MIZ.
    Keywords: Aerial photography; AERP; Distance; Event label; Ice floe, area; Ice floe, perimeter; Ice floe size, mean; Identification; International Polar Year (2007-2008); IPY; Mean caliper diameter (MCD) according to Rothrock & Thorndike (1984); Number; Prydz_Bay-AOI1; Prydz_Bay-AOI2; Prydz Bay; Ratio; Roundness; Standard deviation
    Type: Dataset
    Format: text/tab-separated-values, 266 data points
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5349-5353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied undoped GaAs films grown by metalorganic chemical vapor deposition in a vertical geometry atmospheric pressure reactor. Our results on the surface morphology, carrier concentration and conductivity type and low-temperature photoluminescence spectra of the films, studied as a function of substrate temperature and As/Ga flux during growth, are generally in agreement with previous studies. In addition, we also report the effect of rotation speed of the substrate during growth. It is found that lower speeds give higher defect density and less n-type films and most notably enhance a defect exciton line at 1.5119 eV. From the free-to-bound transitions and from the dependence of the intensities of the exciton lines on growth temperature and As/Ga flux we inferred that the acceptors in our films are C, Zn, Mg and donors are those substituting on Ga sites.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3599-3606 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral band profiles of the E¯→4A2g and 2A¯→4A2g transitions of Cr3+ in Al2O3, i.e., the commonly known ruby 6943 A(ring) (R1) and 6929 A(ring) (R2) emission lines, in the temperature range 10–300 K were recorded and deconvoluted numerically with excellent accuracy into a Lorentzian (homogeneous) component and a Gaussian component. The Gaussian width was taken as arising from sample inhomogeneity and spectrometer slit function, and as expected was found to be independent of temperature. The Lorentzian width was found to vary with temperature in accordance with the two-phonon relaxation processes reported previously, plus a thermal broadening process. While the former processes were quenched completely as temperature was lowered to about 90 K, the latter process, describable with the Debye–Waller factor, still caused a Lorentzian width of about 0.2 cm−1 (for both R1 and R2 lines) which then leveled out quickly to about 0.1 cm−1 as the temperature was lowered further. For temperatures above 100 K, the positions of the R1 and R2 lines were found to have the same temperature dependence as that reported previously. The use of the temperature dependencies of Lorentzian width and line position for temperature sensing was discussed; such an instrument could indeed be made portable because of the simple optical and electronic systems used in our experiments.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x superconducting thin films with a critical current density of 2.3×106 A/cm2 at 77.7 K and 0 T were prepared by a metalorganic chemical vapor deposition process. The films were formed in situ on LaAlO3 at a substrate temperature of 730 °C in 2 Torr partial pressure of N2O. Resistivity and magnetic susceptibility measurements of the as-deposited films show a sharp superconducting transition temperature of 89 K with a narrow width of less than 1 K. Critical current densities were measured by the dc transport method with a patterned bridge of 120 μm×40 μm. Both x-ray diffraction and high-resolution electron microscopy measurements indicate that films grew epitaxially with the c axis perpendicular to the surface of the substrate.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1629-1631 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high-sensitivity Hg1−xCdxTe detectors from low-temperature metalorganic vapor deposition samples. Responsivities of R=2000 V/W and detectivities of D*=2×1010 cm Hz1/2/W have been achieved.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1329-1331 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, small-period epitaxial superlattices were grown using plasma-enhanced chemical vapor deposition. The superlattices were periods of HgTe-CdTe grown on CdTe substrates at 150 °C using dimethylcadmium, dimethylmercury, and dimethyltelluride. Cross-section transmission electron microscopy shows that layers as thin as 80 A(ring) were obtained.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1738-1740 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of mercury telluride were deposited onto cadmium telluride substrates at 85 °C using a glow discharge to enhance the reaction between dimethylmercury and dimethyltelluride. Hall-effect measurements showed the material to be n type with room-temperature and 77 K carrier concentrations of 5.0×1017 and 1.0×1017 cm−3, respectively: room-temperature Hall mobility was 22 000 cm2/V s and 77 K mobility was 52 000 cm2/V s.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2021-2022 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report properties of device quality Hg1−xCdxTe grown by a precracking metalorganic chemical vapor deposition technique. The refinement of the low-temperature growth process and a higher purity metalorganic mercury source enable us to obtain material which has a carrier concentration of 2×1015 cm−3 and mobility as high as 330 000 cm2/V s. Infrared transmission spectra and the photoluminescence measurements obtained from this material will be presented. With further development in the synthetic route of the metalorganic mercury source, further improvement in the purity of the Hg1−xCdxTe is possible.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 295-297 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes the growth of multilayers of HgTe-CdTe on cadmium telluride substrates using metalorganic chemical vapor deposition. These structures were grown using a novel precracking technique that allows growth of the multilayers at low temperatures from the source gases dimethylmercury, dimethylcadmium, and diethyltelluride. Cross sections of several samples were examined using scanning electron microscopy and transmission electron microscopy; these samples were found to have sharp interfaces. The structures for this study are the most sophisticated multilayers of HgTe-CdTe ever grown by metalorganic chemical vapor deposition.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ba1−xSrxTiO3(BST)/YBa2Cu3O7−x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba1−xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7−x layers. The leakage current density through the Ba1−xSrxTiO3 films was about 10−7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1−xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1−xSrxTiO3/YBa2Cu3O7−x heterostructure indicated that conductive oxide materials with close lattice to Ba1−xSrxTiO3 can be good candidates for the bottom electrode.
    Type of Medium: Electronic Resource
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