Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1603-1605
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated a GaAs device containing independently contacted electron and hole layers with a separation of 14 nm. The device processing avoids the use of self-aligned contacts and is, therefore, greatly simplified. Only basic processing facilities are required, and leakage problems typical of self-aligned contacts are prevented. The resulting increased device yield overcomes a technological barrier, which has so far limited the experimental research of the system. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123630
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