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  • 1
    Electronic Resource
    Electronic Resource
    The reaction of vinyl ions with methane (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 5314-5319 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150666a041
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  • 2
    Electronic Resource
    Electronic Resource
    Interface localized states in coupled superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5325-5328 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of evaluating interface states for coupled superlattices has been developed. Explicit solutions for these states have been obtained within the framework of the Kronig–Penney model for the case of two semiconductor superlattices coupled by a tunnel barrier. The interface states are shown to be largely dependent on the coupling strength if the constituent superlattices have identical structure parameters, while insensitive to the tunnel barrier thickness if their structure parameters differ. In the latter case, electrons behave as if the system were composed of two decoupled semi-infinite superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352356
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  • 3
    Electronic Resource
    Electronic Resource
    The reactions of Si+ ions with CH3SiH3, CH3SiD3, C2H6, and CH3CHD2 (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 2819-2824 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reactions of Si+ with CH3SiH3, CH3SiD3, C2H6, and CH3CHD2 have been studied in a tandem mass spectrometric apparatus over the kinetic energy range of 1–10 eV laboratory-frame-of reference (LAB). In all systems, the major process is the formation of SiCH+3, as well as SiCH2D+ and SiCHD+2 in the case of the reaction with CH3CHD2. It is shown that in the reaction of Si+ with CH3SiH3 and CH3SiD3, the process is best described as a Walden inversion, while in the reaction with C2H6 and CH3CHD2, the process appears to approximate the spectator stripping model or modified spectator stripping (polarization-reflection model). In the reaction with CH3CHD2, the slight preference of Si+ to strip the CH3 radical rather than the CHD2 radical is shown to be in accord with a cross-sectional energy dependence of approximately E−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461978
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  • 4
    Electronic Resource
    Electronic Resource
    Rate constants for the N2O reaction system: Thermal decomposition of N2O; N+NO→N2+O; and implications for O+N2→NO+N (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3228-3234 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Experiments on the thermal decomposition of N2O have been carried out in reflected shock waves using the atomic resonance absorption spectrometric (ARAS) technique for monitoring the product O atoms. The results provide a calibration for the ARAS system as well as values for the decomposition rate constant, k1, between 1540 and 2500 K. The present results can be represented as k1=5.25×10−10 exp(−27 921 K/T) cm3 molecule−1 s−1. Additionally, rate constants for the reaction, (2) N+NO→N2+O, have been measured by the laser photolysis-shock tube (LP-ST) technique between 1251 and 3152 K. NO serves as both the photolytic source of N(4S) atoms and the reactant molecule. N atoms are monitored by the ARAS method. The results do not show significant temperature dependence and can be represented by k2=(3.7±0.8)×10−11 cm3 molecule−1 s−1 over the experimental temperature range. Values for the reaction, (−2) O+N2→NO+N, can be derived from these results. The results are compared with earlier studies and are then theoretically discussed in terms of transition states taken from an ab initio electronic structure calculation and also from a dispersion force model. Neither model accurately predicts the observed behavior, and this suggests that further theoretical work with trajectory calculations be attempted to assess the importance of recrossing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463009
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  • 5
    Electronic Resource
    Electronic Resource
    The thermal decomposition of CH3Cl using the Cl-atom absorption method and the bimolecular rate constant for O+CH3 (1609–2002 K) with a pyrolysis photolysis-shock tube technique (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 3919-3928 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rate constants for the thermal decomposition of CH3Cl and the atom–radical reaction O+CH3 have been measured in shock tube experiments. The decomposition of CH3Cl, at three loading pressures, has been carried out between 1663–2059 K with mixtures that varied from 1.25 to 24.9 ppm in Ar. The first-order rate constant k1=1.21×1010 ×exp(−27 838 K/T) s−1 describes the experimental results to within ±29% at the one standard deviation level. The bimolecular rate experiment has then been carried out over the temperature range 1609–2002 K using mixtures of SO2 (49.9 ppm) and CH3Cl (5.14 and 8.2 ppm) in Ar. The technique first involves allowing the thermal decomposition to proceed forming CH3 radicals, and this is then followed by delayed photolysis of SO2 forming the O-atom species. This new method is called the pyrolysis photolysis-shock tube (PyPh-ST) technique. A reaction mechanism had to be used to simulate the measured O-atom profiles for the various experimental conditions, and the bimolecular rate constant was found to be temperature independent with a value of k2=1.4×10−10 cm3 molecule−1 s−1. Reactions (1) and (2) are both theoretically discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464019
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  • 6
    Electronic Resource
    Electronic Resource
    Multipass optical detection in reflected shock waves: Application to OH radicals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4649-4654 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An UV multipass optical absorption method to increase the sensitivity for radical species detection has been developed for high temperature chemical kinetics experiments in a shock tube. The specific illustration is for OH radicals in the reflected shock wave regime. With a resonance lamp source, 12 optical passes were found to give a sufficient signal-to-noise ratio for a large range of [OH]. Two different calibration procedures using the reaction systems H2/O2 and C2H5I/NO2 were used, and a curve of growth was determined. The measured absorbance (ABS), was found to be dependent on both temperature and [OH]. The results can be expressed in a modified Beer's law form as,(ABS)=9.49×10−12T−0.5281[OH]0.8736.Using this curve of growth, the absorbance data from the above kinetics experiments were converted to concentration profiles. These were fully modeled with previously established mechanisms, giving excellent fits. The multipass method is compared to earlier systems that used both resonance lamp and laser absorption sources, and the increase in sensitivity is found to be substantial due primarily to the increased path length. This increased sensitivity inhibits the effects of any possible secondary chemistry thereby allowing chemically isolated experiments on OH + molecules to be performed at high temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145302
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  • 7
    Electronic Resource
    Electronic Resource
    Grain boundary diffusion effects on the sputter depth profiles of Co–Ag bilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3534-3540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effects of surface roughness and grain boundary diffusion (GBD) at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of Co–Ag bilayers and the GBD process of Ag atoms in Co. The Ag layer in the Ag/Co bilayer is transformed from a uniform layer to discrete islands by heat treatment. Enhanced mobility during sputtering at elevated temperatures makes Ag atoms migrate continually from islands to cover neighboring exposed Co, which reduces the size of Ag islands. On the other hand, the surface morphological modification of Co/Ag bilayer does not occur by heat treatment, and the depth profile at 340 °C resembles that from a uniformly intermixed film, which shows a drastic difference from that of Ag/Co. This is explained with a very thin and stable accumulation of Ag on the Co layer by GBD. A model of structural changes in Co/Ag subjected to ion sputtering at elevated temperatures is proposed on the basis of the results. The activation energy and pre-exponential factor for GBD of Ag in Co are found to be 0.46±0.06 eV and ∼1×10−8 cm2/s, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361405
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  • 8
    Electronic Resource
    Electronic Resource
    Magneto-photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360170
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  • 9
    Electronic Resource
    Electronic Resource
    Lateral wet oxidation of AlxGa1−xAs-GaAs depending on its structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3357-3359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of 〈80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1−xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117305
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  • 10
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of high quality GaAs on InP using Se-doped GaAs buffer layer and grating-patterned substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs layers with excellent crystal quality and surface morphology were grown on InP substrates (GaAs/InP) using liquid phase epitaxy. Thin GaAs buffer layers heavily doped with Se were utilized to prevent the substrate meltback and the InP substrates patterned with gratings to reduce the dislocation density. Double crystal x-ray diffraction showed about 230 arcsec full width at half maximum of the (400) reflection, which represents significant improvement compared to the previously reported 350 arcsec of the GaAs/InP layer grown by chemical beam epitaxy using strained superlattice buffer layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113157
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