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  • 1
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    Springer Nature | Springer Nature Singapore
    Publication Date: 2024-04-11
    Description: This open access book provides a detailed exploration of energy management in seaport integrated energy systems, highlighting their potential to replace conventional fuel-based energy usage and promote sustainable development of large ports. In order to achieve carbon neutrality, energy management technologies are crucial for the sustainable development of port systems that couple energies, logistics, and maritime transportation. Research on seaport integrated energy systems has attracted scholars and scientists from various disciplines, such as port electrification, logistics, microgrids, renewable energies, energy storages, and port automation. Taking a holistic approach, this book establishes a fundamental framework for the topic and discusses the electrification process, coupling mechanisms and modeling, optimal planning, low-carbon and economic operation, as well as applications of integrated energy systems in seaports. This book is intended for researchers, graduate students, and other readers interested in green seaport energy management and low-carbon operation technologies under the coupling between logistics and multi-energy systems.
    Keywords: Green port ; Port electrification ; Integrated energy system ; Energy management ; Port microgrid planning ; Converter-based control ; Economic dispatch of port power system ; Optimization of multi-energy utilization ; Port low-carbon planning ; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering ; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering ; thema EDItEUR::R Earth Sciences, Geography, Environment, Planning::RN The environment::RNU Sustainability ; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TN Civil engineering, surveying and building::TNH Highway and traffic engineering
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1823-1825 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal nanoparticle system has been prepared by 200 Kev Ag+ ion implantation into perfect single crystal SiO2 at room temperature to dose: 6.7×1016/cm2. The system presents quasidual-layer structure: the shallower implanted layer containing noninteracting small Ag nanoparticles and the deeper layer containing interacting large nanoparticles, in which great red shift, about 1 eV, comparing with the plasmon resonance frequency of the noninteracting nanoparticle, can be clearly observed. The red shift is attributed to the multipoles interaction among the high density nanoparticles at external electric field. Moreover, the magnitude of red shift increases with implanted dose. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1913-1917 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag+ ions of 200 keV were implanted into single crystal SiO2 at room temperature to five different doses: 5×1015, 2.3×1016, 4.5×1016, 5.6×1016, and 6.7×1016/cm2. With increasing dose, the implanted Ag distributions change from usual Gaussian-type profiles to abnormal bimodal profiles with narrow full width at half maximum, which are associated with Ag nanoparticles forming during high dose implantation. The implanted Ag depth profile evolution with dose can be clearly observed during Rutherford backscattering spectroscopy analysis. The nanoparticles form dual-layer structures at high doses: as far as the dose of 6.7×1016/cm2 is concerned, transmission electron microscopy proves that the shallower implanted layer contains noninteracting small Ag nanoparticles with the diameters of about 7 nm; the deeper layer contains a high density of interacting large nanoparticles with the diameters of about 25 nm. High resolution electron microscopy identifies that the nanoparticles are perfect single crystals. Although plasmon resonance frequency of the Ag nanoparticles formed at relatively low dose agrees well with the Mie's theoretical prediction, great redshift due to multipole interactions between high density nanoparticles occurs for high doses, moreover, the magnitude of redshift increases with implanted dose. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2354-2356 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of heteroepitaxial BaxSr1−xTiO3 thin films with composition x=0.50 were deposited on (001) MgO substrates by pulsed-laser deposition. The thickness of the films was varied from 14 to 500 nm to produce a systematically decreasing level of in-plane tensile stresses. The microstructural and crystallographic features of the films were determined via transmission electron microscopy and x-ray diffraction. A theoretical treatment of the in-plane misfit strain as a function of film thickness is in agreement with the measured out-of-plane lattice parameters. Electrical measurements indicate a drop in the dielectric constant from 2350 for highly stressed thin films to 1700 for relaxed thicker films. The variation in the dielectric constant with the misfit strain is in accordance with a thermodynamic model developed. The relationship between the dielectric constant and electric field is also described by extending the thermodynamic model and taking the effect of electric field into account. A new definition of tunability is adopted to study the effect of strain on tunability. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1695-1697 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm−2 as a possible mechanism for dielectric degradation in these films. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1523-1525 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the dielectric properties of an epitaxial heterostructure comprised of Ba1−xSrxTiO3, Bi4Ti3O12, and (ZrO2)0.91(Y2O3)0.09 grown on silicon substrates for potential use in microwave devices. Careful x-ray analysis indicates crystallographic alignment of all layers and transmission electron microscopy and Auger analysis reveals high quality epitaxy with minimal interdiffusion. The viability of using such heterostructures in actual microwave devices was assessed by incorporating the films in a coupled microstripline phase shifter design. The phase shifter devices, operating in the Ku band, had losses of less than 4 dB with a maximum phase shift of nearly 40° at 40 V. We compare this performance with a (Ba, Sr)TIO3/MgO phase shifter. These results presented represent significant progress towards integrating ferroelectric films with conventional silicon technology. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 576 (1989), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 28 (1995), S. 5921-5927 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 449-457 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 352-359 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a fast tree-searching algorithm and a Pentium cluster, we enumerated all the sequences and compact conformations (structures) for a protein folding model on a cubic lattice of size 4×3×3. We used two types of amino acids—hydrophobic (H) and polar (P)—to make up the sequences, so there were 236(approximate)6.87×1010 different sequences. The total number of distinct structures was 84 731 192. We made use of a simple solvation model in which the energy of a sequence folded into a structure is minus the number of hydrophobic amino acids in the "core" of the structure. For every sequence, we found its ground state or ground states, i.e., the structure or structures for which its energy is lowest. About 0.3% of the sequences have a unique ground state. The number of structures that are unique ground states of at least one sequence is 2 662 050, about 3% of the total number of structures. However, these "designable" structures differ drastically in their designability, defined as the number of sequences whose unique ground state is that structure. To understand this variation in designability, we studied the distribution of structures in a high dimensional space in which each structure is represented by a string of 1's and 0's, denoting core and surface sites, respectively. © 2002 American Institute of Physics.
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