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  • 1
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance characteristics of the Mn activator in a ZnS:Mn electroluminescent device (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7042-7045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electron paramagnetic resonance (EPR) results on the characteristics of the Mn activator in a ZnS:Mn thin film as a function of the film processing conditions. From the x-ray diffraction and EPR measurements of Mn in both ZnS:Mn powder and thin films deposited at the different substrate temperature and thermally treated in the vacuum, it was found that the effective Mn2+ concentration in a ZnS:Mn electroluminescent device could be changed by the annealing process, as well as the substrate temperature, during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349781
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  • 2
    Electronic Resource
    Electronic Resource
    Long-term conduction behavior of white-light emitting ZnS-based phosphor films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 380-386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate systematically the causes of the aging of thin film electroluminescent devices, time-dependent current–voltage characteristics of doubly doped ZnS:Pr, Ce, Mn layer has been investigated under a direct current high field as one of the accelerated aging methods. The surface roughness along to the direction perpendicular to the indium-tin-oxide–glass substrate and the high peak-to-valley roughness are assumed to be the main sources for current fluctuations during the measurement. It was observed that the leakage current level after long-term stressing increased or decreased depending on post-treatment indicating that the bulk-controlled conduction was the dominant mechanism determining long-term behavior and this mechanism is not sensitive to the variations in the deposition parameters. The experimental results indicate the fact that the long-term conduction behavior of ZnS-based film may be related to defect redistribution after lowering barrier height during initial stressing. Finally, we suggest that an enhancement of contact adhesions via surface smoothing of the upper interface can contribute to the long-term stability. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370742
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  • 3
    Electronic Resource
    Electronic Resource
    Direct nano-wiring carbon nanotube using growth barrier: A possible mechanism of selective lateral growth (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6044-6050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we report the direct nano-bridging of carbon nanotubes (CNT) between micro-sized islands using conventional photolithography technique necessary for the nanomachining and the molecular device applications compatible with the Si-based process. The most distinct feature in this work is to use a growth barrier of Nb metal or insulating layer on the top of the catalytic metal to prevent the growth of CNT from the vertical direction to the substrate. As a result, CNTs of either "straight line" or a perfect "Y shape" were selectively grown between lateral sides of the catalytic metals or pre-defined electrodes without any trace of vertical growth. The length of the CNTs was 500–1000 nm and the diameter thinner than about 20 nm. We suggest that magnetic and crystallographic characteristics due to the unique interaction between the Nb overlayer and ferromagnetic Ni catalysts and nano-granulation of Ni layer during the growth process are important for the lateral (i.e., parallel to the substrate) CNTs growth. These results clearly indicate that this method would be one of the most feasible fabrication techniques for the nanomachines or the electronic applications with a high integration level. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466523
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier transport and electron field-emission properties of a nonaligned carbon nanotube thick film mixed with conductive epoxy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4181-4185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the conduction characteristics of multiwalled carbon nanotubes (MWNTs), which were screen printed in a thick film form for field-emission displays. Resistivity and magnetoresistance were measured as a function of temperature T in the range of 1.7–390 K and magnetic field, respectively. The resistivity of the MWNTs for temperatures of 10–390 K indicates that the system is intrinsically metallic and the resistivity–temperature characteristics are well described by the Mott's T−1/4 law in temperatures above 10 K, suggesting that the density of states at the Fermi level is constant in the range of 10–100 K. We found that the main contribution to the conductivity comes from carriers that hop directly between localized states via variable-range hopping. The temperature dependence above 10 K is in good agreement with that of an individual multiwalled carbon nanotube. However, below 10 K the resistivity is well fit to Efros T−1/2 law, confirming the presence of a Coulomb gap for the system. With the decrease of temperature below 10 K the charge carriers in the system are localized by strong disorder, bringing a nearly insulating state. The thick-film form for large-area display resulted in a highly bright light as well as a very low turn-on field just like individual multiwalled nanotubes at room temperature. Also, the electron field-emission characteristics followed typical Fowler–Nordheim conduction under high electric field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287113
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  • 5
    Electronic Resource
    Electronic Resource
    Interface controlled conduction in a blue-light emitting SrS:Cu, Cl electroluminescent phosphor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 236-239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The leakage current mechanism of the electron beam evaporated SrS:Cu, Cl films was investigated as functions of electric field and temperature. The activation energy and interfacial barrier height of electronic conduction for Al–SrS:Cu, Cl–In2O3:Sn-glass structures were determined by analyzing direct current–voltage characteristics of these structures. We observed in this study that postannealing of the SrS:Cu, Cl films in H2S atmosphere leads to a reduction of leakage current as well as an increase of interfacial barrier height for the leakage current flowing in these films, regardless of the polarity of applied voltage. On the basis of this observation, we suggest that surface modification induced by the postannealing in H2S atmosphere may improve the electrical properties of the SrS:Cu films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373707
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of a new stacking method on characteristics of multilayered BaTiO3 thin film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3744-3748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new deposition method used to prepare BaTiO3 thin films resulted in multilayered structure with higher dielectric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decreased the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a multilayered amorphous/microcrystalline/polycrystalline structure, the nature of which was confirmed by scanning electron microscopy and index of refraction measurement. Well-defined ferroelectric hysteresis loops were observed as well with insignificant leakage current effects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361208
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  • 7
    Electronic Resource
    Electronic Resource
    Possible degradation mechanism in ZnS:Mn alternating current thin-film electroluminescent display (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 962-964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O3-SnO2(ITO) side to improve the aging characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104456
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  • 8
    Electronic Resource
    Electronic Resource
    Decrease of electron paramagnetic defect density and enhancement of electron field emission in annealed carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7519-7523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of the paramagnetic defects in carbon films on the field-emission properties. The paramagnetic defects in carbon films originating from the carbon dangling bonds were measured using electron spin resonance (ESR). We found a reduction of the dangling bond density in the annealed carbon films in N2/H2 atmosphere from ESR spectroscopy. The annealed films with lower defect densities, i.e., dangling bonds, showed an improved characteristic of higher emission current density as well as a lower turn-on electric field in the Fowler–Nordheim type tunneling. Also in the annealed carbon films a correlation is observed between the decrease of band gap estimated from the electrical conductivity and the reduction of dangling bond density. The earlier results indicate that the enhancement of the emission current level in the annealed carbon films is related to the decrease of the ESR centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373017
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  • 9
    Electronic Resource
    Electronic Resource
    Tungsten nanowires and their field electron emission properties (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 745-747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of tungsten nanowires, by simple thermal treatment of W films, that behave as self-catalytic layers and their excellent electron field emission properties as well. The obtained nanowires have a diameter ranging from 10 to 50 nm, showing perfect straightness and neat appearance. Typical turn-on field for the electron emission is about 5 V/μm, and the field enhancement factor β becomes 38 256, which is very close to that of the high efficient single-wall carbon nanotube emitters. The most exciting result is the possibility of easy fabrication of perfectly straight nanowires as promising building blocks for terabit-level interconnection and nanomachine components without the intentional use of any heterogeneous catalysts. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490625
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  • 10
    Electronic Resource
    Electronic Resource
    MEMS-Based Fabrication of Multi-Walled Carbon Nanotube pH Sensor (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 326-328 (Dec. 2006), p. 1367-1370 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper, We presents experimental results that demonstrate the pH sensingcapability of MW-CNTs. High-density, well-aligned carbon nanotubes, which are MW-CNTs andvertically aligned on a large area of substrate, has been synthesized. The absorption of differentrange of pH buffer solution in the MW-CNTs changes the conductivity of the MW-CNTs at roomtemperature. A MEMS-based fabrication process was developed to fabricate a device where MWCNTsbased sensing material was precisely assembled pattern
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.326-328.1367.pdf
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