Publication Date:
2018-12-21
Description:
Author(s): Gijae Kang, Dongheon Lee, Kyeongpung Lee, Jeenu Kim, and Seungwu Han In spite of a long history and wide usage in commercial devices, the atomistic behavior of the trap states in a -Si 3 N 4 − x remains elusive, which could hamper further engineering. This study uses density functional theory to investigate the atomic configurations and electronic properties of trap states identified as K centers (nitrogen vacancies), and finds that the charge-neutrality condition imposed on the ensemble of K centers results in apparent “negative- U ” behavior, although each K center exhibits a positive Hubbard U energy. This insight into charge-trap behavior of amorphous materials could be key to improving the performance of devices based on those traps. [Phys. Rev. Applied 10, 064052] Published Thu Dec 20, 2018
Electronic ISSN:
2331-7019
Topics:
Physics
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