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  • 1
    Electronic Resource
    Electronic Resource
    PLS bending magnet x-ray beamline 3C2 : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1722-1724 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of the 3C2 beamline at the Pohang Light Source (PLS) is described. The beamline is designed for x-ray scattering studies with x-ray photons over an energy range of 4–12 keV. A cylindrical Pt-coated silicon mirror intercepts a photon beam up to 3 mrad at a distance of 16 m from a source point and focuses the beam sagittally at the sample position with a magnification of 1:1. For the vertical focusing it will be dynamically bent by the mirror holder. A double-crystal monochromator of two Si(111) crystals with a fixed-exit beam geometry provides monochromatic photons and is located in front of the experimental hutch to reduce the motion of the beam position. The hutch is equipped with a four-circle diffractometer and various photon detection electronics for x-ray scattering experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146463
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  • 2
    Electronic Resource
    Electronic Resource
    Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1484-1486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 °C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at PO2=1 mTorr was 20 μC/cm2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 1011 switching repetitions. The leakage current density at a field of 80 kV was 5×10−8 A/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123588
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  • 3
    Electronic Resource
    Electronic Resource
    Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3007-3009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited on the unstrained and strained Si substrates by an electron cyclotron resonance plasma source. The photoluminescence spectra show that emission energies are different from each other. The redshift of photoluminescence induced by the biaxial tensile stress is increased with decreasing the temperature in the range of 0.11–0.17 eV. The stress effect also enhances the quantum efficiency significantly. The pseudomorphic growth of Si on a relaxed Si0.75Ge0.25 (100) surface provides the strain energy of about 0.17 eV. These comparable results indicate that the shift of emission energy is attributed to the stress effect perturbing the polysilane structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120245
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  • 4
    Electronic Resource
    Electronic Resource
    Anisotropic strains and magnetoresistance of La0.7Ca0.3MnO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 977-979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of perovskite manganite La0.7Ca0.3MnO3 were grown epitaxially on SrTiO3(100), MgO(100) and LaAlO3(100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic, and elongated tetragonal for SrTiO3, MgO, and LaAlO3, respectively, while the unit cell of the bulk is cubic. It is found that the samples with a cubic unit cell show smaller peak magnetoresistance at low fields ((approximately-less-than)1 T) than the noncubic ones do. The present result demonstrates that the magnetoresistance of La0.7Ca0.3MnO3 at low fields can be controlled by lattice distortion via externally imposed strains. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119705
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3908-3910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly split, visible light emissions at room temperature were observed in the range from 335 to 650 nm in silicon-rich oxide films deposited in the plasma phase of a mixture of silane and oxygen. The mechanism of the light emissions is classified into two categories. The photoluminescence bands at both 365 and 469 nm are related to the intrinsic defects of the E′ center and the neutral oxygen vacancy, respectively. However, the relatively sharp peaks at 403 and 535 nm are correlated with the development of polycrystalline core of Si-enriched parts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117566
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  • 6
    Electronic Resource
    Electronic Resource
    High-density transition layer in oxynitride interfaces on Si(100) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3775-3777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrided SiO2 thin films on Si wafers were studied by x-ray reflectivity measurements and their electron-density profiles were evaluated. Interfacial layers of the oxides were found to have densities higher than that of either crystalline Si substrates or strained interfacial layers of thermal oxides. The high density probably results from nitrogen incorporation near the interfaces. The present results suggest that strongly retarded boron penetration through nitrided gate oxides is due to their high-density interfacial layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125452
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  • 7
    Electronic Resource
    Electronic Resource
    Peltier microcalorimeter (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2451-2453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We developed an ac microcalorimeter utilizing the Peltier effect of a thermocouple junction as an ac power source. This Peltier microcalorimeter allows us to measure the absolute value of the heat capacity of small samples with submilligrams of mass. The performance of the microcalorimeter was checked in the temperature range of 15–420 K with α-Al2O3 samples of 0.54 and 2.25 mg. The absolute accuracy was ±3% for the range of 30–150 K and ±1% for 150–420 K. The precision was better than 0.5% in the whole temperature range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126373
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray scattering from poly(thiophene): crystallinity and crystallographic structure (1985)
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 1972-1977 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00152a028
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  • 9
    Electronic Resource
    Electronic Resource
    DESENSITIZATION OF G-PROTEIN-COUPLED RECEPTORS IN THE CARDIOVASCULAR SYSTEM (1999)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 61 (1999), S. 169-192 
    Details
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Notes: Abstract Multiple mechanisms exist to control the signaling and density of G-protein-coupled receptors (GPRs). Upon agonist binding and receptor activation, a series of reactions participate in the turn off or desensitization of GPRs. Many GPRs are phosphorylated by protein kinases and consequently uncoupled from G proteins. In addition, many GPRs are sequestered from the cell surface and become inaccessible to their activating ligands. Both receptor:G protein uncoupling and receptor sequestration may involve the participation of arrestins or other proteins. A model for receptor regulation has been developed from studies of the beta-adrenergic receptor. However, recent studies suggest that other GPRs important in the cardiovascular system, such as the muscarinic cholinergic receptors that regulate heart rate, might be regulated by mechanisms other than those that regulate the beta-adrenergic receptors. This review summarizes our current understanding of the processes involved in the desensitization of GPRs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.physiol.61.1.169
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  • 10
    Electronic Resource
    Electronic Resource
    (Ta/Si) multilayer as a wide-bandpass monochromator material (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 705-707 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Specular and non-specular X-ray reflectivity intensities of a (Ta/Si)60 multilayer sample were measured to characterize its interface structure. Since the multilayer has a good reflectance at its multilayer peaks, its performance as a wide-bandpass monochromator for X-ray scattering experiments of polymers has been tested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049597020311
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