Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 1031-1033
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effects of hydrogen passivation on the performance of visible p-i-n thin-film light-emitting diodes (TFLEDs) have been investigated. The TFLEDs were fabricated using a photochemical vapor deposition method. The hydrogenation process was performed using an inductively coupled plasma system at a rf power of 800 W and a process pressure of 20 mTorr for 30 min. It was found that hydrogenation dramatically improved the performance of these TFLEDs. The threshold voltage was decreased by about 1 V, the electroluminescence (EL) peak shifted from 704.5 to 689 nm, the EL intensity increased by a factor of 3, and the brightness increased from 1 to 24 cd/m2 by 24 times. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116238
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