Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 1842-1845
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Band structures of relaxed InSb/InAs1−xSbx strained-layer superlattices (SLSs) were calculated based on Herman-Skillman neutral atom ionization energies, effective dipole theory, and strain shift of band edges. The conduction-band minimum and the valence-band maximum of InAs1−xSbx are lower in energy than those of InSb, respectively. The band structures of InSb/InAs1−xSbx are type II SLSs and an extreme type II superlattice is predicted for x〈0.82. This extreme type II superlattice with a proper structure factor can have favorable properties for infrared detectors covering the 8–12 μm wavelength range. The requirement for layer thickness of InSb/InAs1−xSbx SLSs with different absorption mechanisms was discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351168
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