ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract A series of experiments have been conducted into the feasibility of a copper interconnection manufacturing scheme in which a nickel layer is employed as the patterning guide and the cushion to subsequent electroless copper deposition. It was found that with nickel as mediator and sodium hypophosphite as the reducing agent, the copper layer can be selectively deposited on Si wafers by an electroless plating process, which saves the conventional dry etching process to pattern the copper layer. Diagnostics on such copper interconnections, using Auger electron spectroscopy (AES), cross-sectional transmission electron microscopy (XTEM) and energy dispersive spectroscopy (EDS), all indicated no diffusion of the deposited copper into the underlying nickel layer after going through 350 °C, one hour heat treatment. © 1998 Kluwer Academic Publishers
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008977002472
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