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  • 1
    Electronic Resource
    Electronic Resource
    Modeling of two-junction, series-connected tandem solar cells using top-cell thickness as an adjustable parameter (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1890-1895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical efficiencies are calculated for two-junction, series-connected solar cells using air mass 1.5 global and direct irradiance spectra. For band-gap combinations previously limited by a low bottom-cell current, thinning of the top cell is shown to result in significant increases in the theoretical efficiencies. The increases are primarily due to increased short-circuit currents, since current matching is achievable. Smaller gains are also seen in the open-circuit voltages of the thinner cells when a low surface-recombination velocity is assumed. Thus, a number of material combinations which previously could only be used in four-terminal configurations can now be considered for series-connected two-junction solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347177
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5163-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering in the CuPt structure is known to significantly reduce the band gap of Ga0.52In0.48P as well as induce a number of unusual details in its optical properties, including long, excitation-intensity-dependent lifetimes and an excitation-intensity-dependent emission energy. We report photoluminescence (PL), photoluminescence excitation (PLE), and resonant Raman measurements performed on ordered and disordered Ga0.52In0.48P. The dominant high energy emission process at low temperature in disordered Ga0.52In0.48P is established to be excitonic, but the exciton trapping energy is not unique. PLE from ordered Ga0.52In0.48P shows significant tailing of electronic states into the band gap and a "band edge'' which depends on detection energy. The dominant radiative process in ordered Ga0.52In0.48P is not excitonic. A large increase in the Stokes shift between the absorption edge (band gap) and PL emission peak occurs when the material orders. Hence, low temperature PL is determined to be a particularly poor measure of band gap. Resonant Raman scattering is used to study optical phonons and their coupling to electronic states. We find that the resonance enhancement at the band edge occurs via localized excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353792
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  • 3
    Electronic Resource
    Electronic Resource
    Anomalous electroreflectance spectrum of spontaneously ordered Ga0.5In0.5P (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4130-4135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance spectrum of spontaneously ordered Ga0.5In0.5P contains two extra features at energies near 2.2 and 2.35 eV. The energies and intensities of these transitions are shown to be dependent on growth temperature and substrate misorientation. The possible origins of the two transitions are explored. The analysis shows that the transition at about 2.35 eV exhibits shifts consistent with those expected for Ga0.5In0.5P with ordered {111} planes. The second transition is shown to be unexpected and is not conclusively assigned. However, a possible assignment is identified, implying that a complete understanding of spontaneously ordered Ga0.5In0.5P may require simultaneous consideration of two different types of order.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354437
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of free carrier concentration in n-GaInP alloy by Raman scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2515-2519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360715
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  • 5
    Electronic Resource
    Electronic Resource
    Low-band-gap Ga0.5In0.5P grown on (511)B GaAs substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5110-5113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap and microstructure of Ga0.5In0.5P have been shown to vary with deposition conditions. However, growth on (511)B GaAs substrates has been reported to give Ga0.5In0.5P with band gaps close to that of disordered material. It is shown here, that with appropriate selection of the growth parameters, Ga0.5In0.5P can be grown with low band gap and significant ordering on even the (511)B substrates, implying that surface steps play an important role in the ordering process. For the lattice-matched composition, a band gap of 1.83 eV was obtained using low growth temperature (575 °C), low growth rate (0.55 μm/h), and high phosphine pressure (5 Torr).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355756
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of growth rate on the band gap of Ga0.5In0.5P (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1922-1924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap of Ga0.5In0.5P is reported as a function of growth rate and growth temperature. The Ga0.5In0.5P is grown lattice matched to 2°-off (100) GaAs substrates by atmospheric pressure organometallic chemical vapor deposition using an inlet group V/III ratio of 65. The variation of the band gap is surprisingly complex, taking five different functional forms within the two-dimensional parameter space. These include regions in which the band gap (1) increases with growth rate, (2) decreases with growth rate, (3) is independent of both growth rate and temperature, (4) is independent of growth rate, but dependent on growth temperature, and (5) is not measurable since three-dimensional, instead of two-dimensional, growth is observed. The behavior can only be explained by a theory involving competing processes. One such theory is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104013
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  • 7
    Electronic Resource
    Electronic Resource
    Elucidation of x-ray diffraction data on the nature of the ordering of GaInP2 and how the ordering relates to changes in the optical properties (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 718-720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between anomalous changes in the band gap and ordering of the group III sublattice of GaInP2 is discussed. X-ray diffraction data are reported for the first time which show significant long-range order of the CuPt type, i.e., alternating {111} Ga and In planes, in agreement with published electron diffraction data. However, the x-ray and electron diffraction data differ as to which of the four possible orientations are observed and as to the directions of the streaks. No correlation was observed between the long-range order parameter and the band-gap anomalies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101470
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  • 8
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of hydrogenated amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 249-256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films are made by atmospheric pressure chemical vapor deposition from polysilanes between 430 and 480 °C. The films have hole diffusion lengths up to 0.4 μm, as measured by the surface photovoltage technique. Oxygen impurities are shown to reduce the diffusion length. Stainless-steel and crystalline silicon substrates give slightly different results, implying that contamination is introduced by the substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336872
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  • 9
    Electronic Resource
    Electronic Resource
    Band-gap narrowing in ordered Ga0.47In0.53As (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1806-1808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of band-gap energy reduction in Ga0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt-type ordering. A reduction of more than 65 meV in the band-gap energy is observed for lattice-matched samples that show strong CuPt-like ordering by transmission electron microscopy. By comparison samples that show no CuPt-like ordering diffraction signatures, do not have reduced band-gap energies. Studies of the influence of growth parameters on the band-gap energy indicate a U-shaped dependence on the growth temperature with a minimum around 550 °C and decreasing band-gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5–4 μm/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109640
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  • 10
    Electronic Resource
    Electronic Resource
    Band gap of "completely disordered'' Ga0.52In0.48P (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3185-3187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of ordering in Ga0.52In0.48P is well known to reduce the optical band gap; the amount of band gap reduction is often used to measure the degree of ordering. For such measurements to be meaningful, the band gap of the random ("completely disordered'') binary alloy must be known. Values of this fundamental material parameter appearing in the literature vary by up to 40 meV, while the largest band gap reduction reported to date is only about 120 meV, i.e., within a factor of 3 of the uncertainty in one endpoint. We report here a low temperature band gap of 2.010±0.007 eV for material lattice matched to GaAs as deduced from a broad spectrum of samples believed for different reasons to contain minimal ordering. The corresponding value at 295 K is 1.910±0.008 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113717
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