Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 1070-1074
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A scattering theory of one-dimensional electron gas formed in a narrow channel GaAs-AlGaAs high electron mobility transistor has been developed. The mobility values for the different scattering mechanisms have been computed and their variation with temperature has been presented. The various scattering processes include acoustic phonon scattering for both deformation potential and piezoelectric scattering mechanisms, impurity scattering, and surface roughness scattering at lower temperatures and polar optic phonon scattering at higher temperatures. The effect of dynamic screening has also been included. Finally, the temperature variation of thermopower for different 1D electron concentrations has been shown and attempts have been made to interpret the results obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346746
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