ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial growth of Si on PtSi(010)/Si(111) structure, which was fabricated by coevaporation of Pt and Si with the stoichiometric ratio (Pt/Si=1/1), was carried out in a molecular beam epitaxy system. At the substrate temperature of 400 °C, Si grew epitaxially on the PtSi layer and Si(111)/PtSi(010)/Si(111) double heterostructure was obtained. On the other hand, at the substrate temperature of 600 °C, the PtSi layer transformed into epitaxial columns and/or walls in the process of Si deposition and evaporated Si filled the space among the PtSi columns and/or walls epitaxially.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356125
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