ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Threshold voltage (Vth) was measured on 4H-SiC power DMOSFET devices as a functionof temperature, gate stress, and gate stress time. Vth varied linearly with gate stress and gate stresstime and inversely with temperature. This instability is explained with the trapping rate of channelelectrons at or near the SiO2-SiC interface. Since the measurement scale of Vth is large in this case (ittakes approx. 20 s to measure Vth), it is assumed that fast interface traps, i.e., ones closer to theinterface, are already filled and do not contribute to the shift in Vth. Comparison with theoreticalcalculations shows the rate of carrier detrapping becomes higher with temperature and as a result themeasured value of Vth approaches the theoretical value
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1147.pdf
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