ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
High impedance silicon carbide power RF transistors are reported, whichuse the technology of Lateral Epitaxy Metal-Semiconductor FET (LEMES). TheLEMES transistor utilizes a heavily doped buried depletion stopper to increase output impedance and breakdown voltage and to eliminate undesirable hot-carrier trapping effects. A power density of 2-3 W/mm at 2 GHz is routinely achieved resulting in a total output power of 10W for packaged components. The value of input and output impedance is around 50 Ohms for a frequency of around 2 GHz
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.853.pdf
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