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  • 1
    Electronic Resource
    Electronic Resource
    Growth and characterization of new Bi14(Sr0.33Ca0.67)5O26 single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4373-4378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New insulating Bi14(Sr0.33Ca0.67)5O26 layered single crystals have been grown by a flux method and their crystallographic properties have been characterized. The crystals exhibited a smooth cleaved surface perpendicular to [001] orientation. The x-ray precession camera analysis indicated the crystals have rhombohedral symmetry, belonging to a Laue group of 3¯m. Furthermore, some kinds of rare-earth elements have been successfully substituted for lattice sites of the crystal. The variation of the c-axis length reflected ionic radii of the rare-earth elements substituted. Radiant luminescence has been observed in visible and infrared regions in the Er-doped crystals, which was assigned to electron transition between spin-orbit levels of trivalent Er ions in the crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348361
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 °C (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 162-166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and electrical properties of SrRuO3 thin films grown at various temperatures (Td) were investigated. The films grew epitaxially when Td[greater, double equals]350 °C. The dependences of crystallinity, conductivity, and carrier density on temperature were less pronounced when Td was above 400 °C, whereas crystallinity and conductivity were markedly degraded with decreasing Td when Td[less, double equals]400 °C. Owing to this unique dependence, SrRuO3 thin film deposited at Td as low as 400 °C showed an acceptable quality for application to electronic devices. For the SrRuO3/SrTiO3/SrRuO3 trilayered capacitor structure, when the top SrRuO3 layer was grown at 400 °C, a symmetric permittivity–voltage curve was observed and the SrRuO3 permittivity value of 340 ε0 was obtained. When the top SrRuO3 layer was grown at 600 °C, the permittivity value of SrTiO3 decreased and even a slight asymmetry of the permittivity–voltage curve could ever be observed. This indicates that the lower temperature deposition of SrRuO3 thin film causes less interface degradation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319323
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  • 3
    Electronic Resource
    Electronic Resource
    Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 187-191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored electrical trap levels inside SrTiO3 epitaxial films grown by the pulsed laser deposition method from electrical measurements of semiconducting oxide p-i-n diodes consisting of La0.85Sr0.15MnO3/SrTiO3/La0.05Sr0.95TiO3 trilayers. The prepared p-i-n diodes exhibited a marked temperature dependence in their current–voltage (I–V) characteristics. By attributing the temperature dependence of I–V curves to the space-charge limitation due to the trapped charges inside the i-SrTiO3 layer, we estimated crudely the level of the dominant trap in the SrTiO3 layer as ∼0.09 eV. The trap density was also estimated from the curve-fitting technique. At this moment, the trap densities were 1016 and 1018/cm3 when SrTiO3 layers were grown at 650 and 630 °C, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334638
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  • 4
    Electronic Resource
    Electronic Resource
    Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1977-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevation of the Fermi level toward the acceptor boron level. Thus, a hole excitation 6–7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i-diamond) where the mobility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the same amount of boron is uniformly doped.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357661
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of epitaxial SrTiO3 thin films with prominent polarizability (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5295-5301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial SrTiO3 (STO) thin films were grown successfully by rf reactive magnetron sputtering on (111)Pt/(100)MgO substrates. At present, the dielectric constant of the STO film (110 nm thick) has reached 370ε0 at room temperature. Despite the general difficulty of obtaining a high dielectric constant for the ultrathin STO films, a fairly thin STO film of 39 nm showed a large value of 240ε0. The existence of an STO degraded layer at the interface was suggested by the Fourier transform infrared spectrum observed for the ultrathin STO film of 3.5 nm. The interfacial layer with poor quality diminishes the mean dielectric constant of the STO thin films. This interfacial layer effect offers an explanation for the difficulty in obtaining a high dielectric constant of the ultrathin STO films. Moreover, the band diagram of a Cr/STO/Pt metal-insulator-other metal structure is discussed. Compared to the experimental results, a space-charge-free band diagram was concluded to be appropriate and was consistent with the observed Schottky-like leakage current and the inverse proportionality of the capacitance and the STO thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355730
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  • 6
    Electronic Resource
    Electronic Resource
    Role of xenon additive in microwave plasma-assisted (H2+CH4) chemical vapor deposition of diamond thin film (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6059-6063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined in detail the role of the Xe additive in microwave plasma-assisted {CH4+H2} chemical vapor deposition (CVD) of diamond film. Effects of Xe addition were evident in the increased growth rate (about 50% increase for 1% Xe), without degradation of the crystallinity, and in the morphological change from the cubic to platelet grain structures. Based on the results of measuring the plasma emission spectra, Raman shift, and microwave plasma impedance, the favorable effects of Xe addition were attributed to its low dissociation and excitation energies (8.28 eV for Xe radicals), which are sufficient for the formation of CH3 but not CH2 radicals. Namely, the addition of Xe caused the CVD plasma to have higher density and lower temperature. This resulted in a large amount of atomic hydrogen and CH3 (precursors for diamond crystallization) and also a smaller amount of CH2, leading to the growth of a good-quality diamond film with a high deposition rate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368916
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  • 7
    Electronic Resource
    Electronic Resource
    SrTiO3 films epitaxially grown by eclipse pulsed laser deposition and their electrical characterization (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5351-5357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial (100)SrTiO3 (STO) thin films were grown successfully on (100)La0.7Sr0.3MnO3/(100)MgO substrates by eclipse pulsed laser deposition in (O2+Ar) ambient gas. The droplet-free STO films showed marked improvement in their permittivity, 320ε0 at room temperature. Time-resolved plume observation and spectrum measurement suggested that the improvement was due to effective excitation and ionization of growth species in the plume with the aid of coexisting Ar. The STO films also showed nonlinear permittivity against the applied field, as commonly observed in single-crystal bulk STO. Using this nonlinear characteristic and hole injection into the STO valence band, we deduced the hole trap concentration in the STO films. The concentration was on the order of 1018 cm−3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367363
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  • 8
    Electronic Resource
    Electronic Resource
    Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3422-3429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond metal-insulator-semiconductor diodes and field-effect transistors (MISFETs) have been prepared using CaF2 gate insulator and nondoped (in some cases, boron was doped) diamond homoepitaxial films. The resultant capacitance-voltage (C-V) curves and drain current-drain voltage (ID−VD) curves strongly depended on the amount of oxygen contamination of diamond surface. From analyses of C-V and ID−VD curves, it was found that the oxygen contamination induced the surface states with two distribution peaks locating very near the valence band edge and at the energy of ∼1 eV from the valence band edge. Although fluorination of oxygen-terminated diamond surface proceeded to a certain extent during CaF2 deposition at the elevated temperatures in vacuum, it still allowed surface state formation of about ∼1014/cm2 eV near the valence band edge due to uncompleted exchange of oxygen by fluorine atoms and easy penetration of residual oxygen in the chamber through the CaF2 insulator at elevated temperatures. Reduced-oxygen process by diamond surface passivation with hydrogen (hydrogenation) and room temperature deposition of CaF2 greatly improved the surface stability, and consequently, the surface state density near the valence band edge was reduced to ∼1012/cm2 eV. In this manner, the effective hole mobility of ∼10 cm2/V s was obtained from the diamond MISFET, which can be well compared with the surface Hall mobility of 35 cm2/V s. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365658
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of NbN on an ultrathin MgO/semiconductor system (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 961-966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NbN epitaxial growth on an ultrathin MgO/semiconductor system was carried out by reactive sputtering. It was revealed that (100)-oriented NbN epitaxy was achieved on a (100)-oriented Si substrate by introducing a MgO buffer layer as thin as 5 A(ring) at the interface. An interrupt-sputtering technique was newly conducted to obtain the epitaxial films, which were intermittently deposited by rf sputtering. A metal-insulator-semiconductor tunneling Schottky diode with epitaxial NbN was prepared using this technique, and evaluated in its current-voltage characteristics. Our study indicated that the NbN epitaxy mechansim can be explained by its growth on a (100) naturally oriented 5-A(ring) MgO layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339708
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  • 10
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of diamond thin films by electron cyclotron-resonance microwave plasma chemical-vapor-deposition apparatus with CO/H2 gaseous source (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 582-584 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxy of the diamond thin films has been carried out by employing the ECR microwave plasma CVD apparatus with a CO/H2 gaseous source. From RHEED observation, it appeared that the surface morphology of (100) oriented film was much better than that of the (110) oriented. The (2×1) surface reconstruction remained unchanged even when the film was cooled down in H2 ambient after the epitaxy was completed. Although the synthetic diamond substrates had nonuniformity in their cathodoluminescence patterns, epitaxial films grown onto them offered uniform ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108862
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