ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
High-temperature oxidation behaviors of Ti-Al-Si-N and Ti-Al-N films werecomparatively investigated in this work. Two kinds of Ti0.75Al0.25N and Ti0.69Al0.23Si0.08N films weredeposited on WC-Co substrates by a DC magnetron sputtering method using separate Ti3Al(99.9%)and Si(99.99%) targets in a gaseous mixture of Ar and N2. Si addition of 8 at.% into Ti-Al-N filmmodified its microstructure to a fine composite comprising, Ti-Al-N crystallites and amorphousSi3N4, and to a smoother surface morphology. While the solid solution Ti0.75Al0.25N film hadsuperior oxidation resistance up to around 700[removed info], the composite Ti-Al-Si-N film showed furtherenhanced oxidation resistance. Both Al2O3 and SiO2 layers played roles as a barrier against oxygendiffusion for the quaternary Ti-Al-Si-N film, whereas only the Al2O3 oxide layer formed at surfacedid a role for the Ti-Al-N film. Oxidation behavior and mechanical stability of the films afteroxidation were compared between two films using instrumental analyses such as XRD, GDOES,XPS, and scratch test
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/22/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.118.317.pdf
Permalink